González Pérez, Benito | accedaCRIS

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González Pérez, Benito

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A Compact DC Model for PEDOT-Based Organic Electrochemical Transistors (OECTs) González Pérez, Benito; Masip, Laia; Lázaro, Marc; Villarino, Ramón; Girbau, David, et al Issued date: 2024 DOI: 10.1109/TED.2024.3469170 Source: IEEE Transactions on Electron Devices [ISSN 0018-9383], (2024) SJR: 0,785 - Q1 JCR: 2,9 - Q2 SCIE MIAR ICDS: 11,0 Artículo
Gate Geometry-Dependent Thermal Impedance of Depletion Mode HEMTs Gonzalez, Benito; Lazaro, Antonio; Rodriguez, Raul Issued date: 2023 DOI: 10.1109/TED.2023.3305313 Source: IEEE Transactions on Electron Devices[ISSN 0018-9383], (Enero 2023) SJR: 0,785 - Q1 JCR: 2,9 - Q2 SCIE MIAR ICDS: 11,0 Artículo
A Simple Method to Extract the Thermal Resistance of GaN HEMTs From De-Trapping Characteristics González, Benito; Luis C. Nunes; Jo ao L. Gomes; Joana C. Mendes; José L. Jiménez Issued date: 2023 DOI: 10.1109/LED.2023.3265766 Source: IEEE Electron Device Letters, vol. 44, no. 6, pp. 891-894 SJR: 1,25 - Q1 JCR: 4,1 - Q2 SCIE MIAR ICDS: 11,0 Artículo
RF Extraction of Thermal Resistance for GaN HEMTs on Silicon González, Benito; Lazaro, A; Rodriguez, R Issued date: 2022 DOI: 10.1109/TED.2022.3159611 Source: IEEE Transactions on Electron Devices [ISSN 0018-9383], v. 69(5), p. 2307-2312 SJR: 0,773 - Q2 JCR: 3,1 - Q2 SCIE MIAR ICDS: 11,0 Artículo
Gate Length-Dependent Thermal Impedance Characterization of PD-SOI MOSFETs González Pérez, Benito; Cabrera Peña, José María; Lazaro, Antonio Issued date: 2022 DOI: 10.1109/TED.2021.3132854 Source: IEEE Transactions on Electron Devices [ISSN 0018-9383], v. 69 (2), p. 469-474, (Febrero 2022) SJR: 0,773 - Q2 JCR: 3,1 - Q2 SCIE MIAR ICDS: 11,0 Artículo
Long-Range Wireless System for U-Value Assessment Using a Low-Cost Heat Flux Sensor Lazaro, M; Lazaro, A; González, B.; Villarino, R; Girbau, D Issued date: 2022 DOI: 10.3390/s22197259 SJR: 0,764 - Q1 JCR: 3,847 - Q1 SCIE MIAR ICDS: 10,8
A new model of thermionic emission mechanism for non-ideal Schottky contacts and a method of extracting electrical parameters Helal, Hicham; Benamara, Zineb; González Pérez, Benito; Kacha, Arslane Hatem; Rabehi, Abdelaziz, et al Issued date: 2020 DOI: 10.1140/epjp/s13360-020-00916-5 Source: European Physical Journal Plus[EISSN 2190-5444],v. 135 (11), (Noviembre 2020) SJR: 0,65 - Q2 JCR: 3,911 - Q1 SCIE Artículo
Geometric Modeling of Thermal Resistance in GaN HEMTs on Silicon Gonzalez, Benito; De Santi, Carlo; Rampazzo, Fabiana; Meneghini, Matteo; Núñez Ordóñez, Antonio Issued date: 2020 DOI: 10.1109/TED.2020.3028358 Source: IEEE Transactions on Electron Devices [ISSN 0018-9383], v. 67 (12), p. 5408-5414, (Diciembre 2020) SJR: 0,828 - Q1 JCR: 2,917 - Q2 SCIE Artículo
Temperature-Dependent Thermal Capacitance Characterization for SOI-MOSFETs Gonzalez, Benito; Aja, Beatriz; Artal, Eduardo; Lazaro, Antonio; Núñez Ordóñez, Antonio Issued date: 2019 DOI: 10.1109/TED.2019.2935500 Source: Ieee Transactions On Electron Devices[ISSN 0018-9383],v. 66 (10), p. 4120-4125 SJR: 0,879 - Q1 JCR: 2,913 - Q2 SCIE Artículo
Single event effects analysis and charge collection mechanisms on AlGaN/GaN HEMTs Mateos Angulo, Sergio; Rodríguez Del Rosario, Raúl; Del Pino, J.; Gonzalez, B.; Khemchandani, S. L. Issued date: 2019 DOI: 10.1088/1361-6641/ab058a Source: Semiconductor Science And Technology [ISSN 0268-1242], v. 34 (3), 035029 SJR: 0,79 - Q1 JCR: 2,361 - Q2 SCIE Artículo
DC gate leakage current model accounting for trapping effects in AlGaN/GaN HEMTs Rodríguez Del Rosario, Raúl; González Pérez, Benito; García García, Javier; Toulon, Gaetan; Morancho, Frédéric, et al Issued date: 2018 DOI: 10.3390/electronics7100210 Source: Electronics (Switzerland) [ISSN 2079-9292], v. 7 (10), p. 210, (2018) SJR: 0,461 - Q1 JCR: 1,764 - Q3 SCIE Artículo
Thermal resistance characterization for multifinger SOI-MOSFETs Gonzalez, Benito; Rodriguez, Raul; Lázaro, Antonio Issued date: 2018 DOI: 10.1109/TED.2018.2853799 Source: IEEE Transactions on Electron Devices[ISSN 0018-9383],v. 65 (8419075), p. 3626-3632 SJR: 0,853 - Q1 JCR: 2,704 - Q2 SCIE Artículo
Numerical Simulation for DC Schottky Gate Leakage Current in AlGaN/GaN HEMTs Rodríguez, R.; González, B.; García, J.; Núñez, A.; Toulon, G., et al Issued date: 2018 DOI: 10.1109/CDE.2018.8596883 Source: Proceedings of the 2018 12th Spanish Conference on Electron Devices, CDE 2018 Actas de congresos
Electrothermal DC characterization of GaN on Si MOS-HEMTs Rodríguez Hernández, R.; González, B.; García, J.; Núñez, A. Issued date: 2017 DOI: 10.1016/j.sse.2017.08.002 Source: Solid-State Electronics[ISSN 0038-1101],v. 137, p. 44-51 SJR: 0,492 - Q2 JCR: 1,666 - Q3 SCIE Artículo
DC self-heating in GaN on Si MOS-HEMTs Rodríguez Del Rosario, Raúl; González Pérez, Benito; García García, Javier; Núñez Ordóñez, Antonio Issued date: 2017 Source: Conference book 41st Workshop on Compound Semiconductor Devices and Integrated Circuits held in Europe : 21-24 May, Las Palmas de Gran Canaria (2017). ISBN: 978-84-16989-68-3. p. 44-53 Actas de congresos
DC characteristics with substrate temperature for GaN on Si MOS-HEMTs Rodriguez, R.; Gonzalez, B.; Garcia, J.; Vega Martínez, Aurelio; Nunez, A. Issued date: 2017 DOI: 10.1109/CDE.2017.7905214 Source: 2017 Spanish Conference on Electron Devices, CDE 2017 (7905214) Actas de congresos
Large-Signal DG-MOSFET Modelling for RFID Rectification Rodríguez, R.; González Pérez, Benito; García, J.; Lázaro, A.; Iñiguez, B., et al Issued date: 2016 DOI: 10.1155/2016/8017139 Source: Advances in Condensed Matter Physics[ISSN 1687-8108],v. 2016 (8017139) SJR: 0,232 - Q3 JCR: 1,044 - Q4 SCIE Artículo
DC self-heating effects modelling in SOI and bulk FinFETs González, B.; Roldán, J. B.; Iñiguez, B.; Lázaro, A.; Cerdeira, A. Issued date: 2015 DOI: 10.1016/j.mejo.2015.02.003 Source: Microelectronics Journal[ISSN 0026-2692],v. 46, p. 320-326 JCR: 0,876 - Q3 SCIE Artículo
Numerical simulation and compact modelling of AlGaN/GaN HEMTs with mitigation of self-heating effects by substrate materials Rodríguez, Raúl; González, Benito; García, Javier; Yigletu, Fetene M.; Tirado, José M., et al Issued date: 2015 DOI: 10.1002/pssa.201431897 Source: Physica Status Solidi (A) Applications and Materials Science[ISSN 1862-6300],v. 212, p. 1130-1136 SJR: 0,688 - Q2 JCR: 1,648 - Q2 SCIE Artículo
N-well resistance modelling in Q-factor of doughnut-shaped PN varactors Marrero-Martín, M.; González, B.; García, J.; Hernández Ballester, Antonio Issued date: 2015 DOI: 10.1016/j.sse.2014.10.005 Source: Solid-State Electronics[ISSN 0038-1101],v. 103, p. 104-109 SJR: 0,642 - Q1 JCR: 1,345 - Q2 SCIE Artículo