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González Pérez, Benito

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32 artículo

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Title Issue Date
Modelling of low power cw laser beam heating effects on a GaAs substrate Abbott, D; Davis, B; Gonzalez, B ; Hernández Ballester, Antonio ; Eshraghian, K Issued date: 1998 DOI: 10.1016/S0038-1101(97)00284-0 Source: Solid-State Electronics[ISSN 0038-1101],v. 42 (5), p. 809-816 JCR: 0,883 - Q1 SCIE Artículo
Neu-MOS (νMOS) for smart sensors and extension to a novel neu-GaAs (νGaAs) paradigm Abbott, D.; Al-Sarawi, S. F.; Gonzalez, B. ; Lopez, J. ; Austin-Crowe, J., et al Issued date: 1998 Source: Proceedings of the IEEE International Conference on Electronics, Circuits, and Systems,v. 3, p. 397-404 Artículo
An energy relaxation time model for device simulation Gonzalez, B ; Palankovski, V; Kosina, H; Hernandez, A; Selberherr, S Issued date: 1999 DOI: 10.1016/S0038-1101(99)00132-X Source: Solid-State Electronics[ISSN 0038-1101],v. 43 (9), p. 1791-1795 JCR: 0,928 - Q2 SCIE Artículo
Optimization of the δ-doped layer in P-HFETs at medium/high temperatures González, B. ; Hernández Ballester, Antonio ; García, J. ; Del Pino, J. ; Sendra, J. R. , et al Issued date: 2000 DOI: 10.1088/0268-1242/15/4/101 Source: Semiconductor Science and Technology[ISSN 0268-1242],v. 15 JCR: 1,169 - Q1 SCIE Artículo
Power model for DCFL family García, J. ; Hernández Ballester, Antonio ; Del Pino, J. ; Sendra, J. R. ; González, B. , et al Issued date: 2002 DOI: 10.1049/el:20020027 Source: Electronics Letters[ISSN 0013-5194],v. 38, p. 13-14 SJR: 1,542 - Q1 SCIE Artículo
Static simulation of pseudomorphic heterostructure FETs at medium/high temperatures González, B. ; Hernández Ballester, Antonio ; González-Sanz, F.; Fernández De Ávila, S.; Nunez, A. Issued date: 2002 DOI: 10.1088/0268-1242/17/6/306 Source: Semiconductor Science and Technology[ISSN 0268-1242],v. 17, p. 534-539 JCR: 1,241 - Q1 SCIE Artículo
Models and tools for CMOS integrated inductors Del Pino, J. ; Sendra, J. R. ; Hernández Ballester, Antonio ; Khemchandani, S. L. ; Aguilera, J., et al Issued date: 2002 DOI: 10.1023/A:1021220116195 Source: Analog Integrated Circuits and Signal Processing[ISSN 0925-1030],v. 33, p. 171-178 JCR: 0,204 - Q4 SCIE Artículo
Integrated inductors modeling for library development and layout generation Sendra, José R. ; del Pino, J ; Hernández, Antonio ; Gonzalez, B ; Garcia, J , et al Issued date: 2003 DOI: 10.1023/A:1024122430963 Source: Analog Integrated Circuits And Signal Processing[ISSN 0925-1030],v. 35 (2-3), p. 121-132 JCR: 0,254 - Q4 SCIE Artículo
Characterization of extrinsic resistances in temperature behaviour modelling of InGaAs MODFETs González, B. ; Hernández Ballester, Antonio ; García, J. ; Del Pino, F. J. ; Sendra, J. R. , et al Issued date: 2004 DOI: 10.1088/0268-1242/19/5/015 Source: Semiconductor Science and Technology[ISSN 0268-1242],v. 19, p. 648-654 JCR: 2,152 - Q1 SCIE Artículo
Improved tolerance to operation temperature in δ-doped inverted HFETs González, B. ; Hernández Ballester, Antonio Issued date: 2007 DOI: 10.1088/0268-1242/22/4/015 Source: Semiconductor Science and Technology [ISSN 0268-1242], v. 22 (4), p. 385-391 JCR: 1,899 - Q1 SCIE Artículo
An analytical model of electric substrate losses for planar spiral inductors on silicon Gõni, Amaya; del Pino, Javier ; González, Benito ; Hernández Ballester, Antonio Issued date: 2007 DOI: 10.1109/TED.2006.890366 Source: IEEE Transactions on Electron Devices[ISSN 0018-9383],v. 54(3), p. 546-553 JCR: 2,165 - Q1 SCIE Artículo
Accurate planar spiral inductor simulations with a 2.5-D electromagnetic simulator Goñi, Amaya; Pino, Javier Del ; González, Benito ; Khemchandani, Sunil ; Hernández Ballester, Antonio Issued date: 2008 DOI: 10.1002/mmce.20283 Source: International Journal of RF and Microwave Computer-Aided Engineering[ISSN 1096-4290],v. 18, p. 242-249 JCR: 0,462 - Q4 SCIE Artículo
Capacitive model for integrated PN varactors of cells with N+ buried layer Marrero-Martín, M. ; García, J. ; González, B. ; Hernández Ballester, Antonio Issued date: 2010 DOI: 10.1002/jnm.751 Source: Spanish Conference on Electron Devices [ISSN 2163-4971], v. 23 (4-5), p. 364-378 Artículo
Numerical dc self-heating in planar double-gate MOSFETs González, B. ; Iñiguez, B.; Lázaro, A.; Cerdeira, A. Issued date: 2011 DOI: 10.1088/0268-1242/26/9/095014 Source: Semiconductor Science and Technology[ISSN 0268-1242],v. 26 (095014) SJR: 1,01 - Q2 JCR: 1,723 - Q1 SCIE Artículo
Wide range fully integrated VCO with new cells-based varactor Marrero-Martin, Margarita ; Gonzalez, Benito ; Garcia, Javier ; Khemchandani, Sunil L. ; Hernández Ballester, Antonio , et al Issued date: 2012 DOI: 10.1080/00207217.2011.651699 Source: International Journal of Electronics[ISSN 0020-7217],v. 99, p. 1165-1178 SJR: 0,243 - Q3 JCR: 0,509 - Q4 SCIE Artículo
In-depth analysis and modelling of self-heating effects in nanometric DGMOSFETs Roldán, J. B.; González, B. ; Iñiguez, B.; Roldán, A. M.; Lázaro, A., et al Issued date: 2013 DOI: 10.1016/j.sse.2012.07.017 Source: Solid-State Electronics[ISSN 0038-1101],v. 79, p. 179-184 SJR: 0,783 - Q1 JCR: 1,514 - Q2 SCIE Artículo
N-well resistance modelling in Q-factor of doughnut-shaped PN varactors Marrero-Martín, M. ; González, B. ; García, J. ; Hernández Ballester, Antonio Issued date: 2015 DOI: 10.1016/j.sse.2014.10.005 Source: Solid-State Electronics[ISSN 0038-1101],v. 103, p. 104-109 SJR: 0,642 - Q1 JCR: 1,345 - Q2 SCIE Artículo
DC self-heating effects modelling in SOI and bulk FinFETs González, B. ; Roldán, J. B.; Iñiguez, B.; Lázaro, A.; Cerdeira, A. Issued date: 2015 DOI: 10.1016/j.mejo.2015.02.003 Source: Microelectronics Journal[ISSN 0026-2692],v. 46, p. 320-326 JCR: 0,876 - Q3 SCIE Artículo
Numerical simulation and compact modelling of AlGaN/GaN HEMTs with mitigation of self-heating effects by substrate materials Rodríguez, Raúl ; González, Benito ; García, Javier ; Yigletu, Fetene M.; Tirado, José M., et al Issued date: 2015 DOI: 10.1002/pssa.201431897 Source: Physica Status Solidi (A) Applications and Materials Science[ISSN 1862-6300],v. 212, p. 1130-1136 SJR: 0,688 - Q2 JCR: 1,648 - Q2 SCIE Artículo
Large-Signal DG-MOSFET Modelling for RFID Rectification Rodríguez, R.; González Pérez, Benito ; García, J. ; Lázaro, A.; Iñiguez, B., et al Issued date: 2016 DOI: 10.1155/2016/8017139 Source: Advances in Condensed Matter Physics[ISSN 1687-8108],v. 2016 (8017139) SJR: 0,232 - Q3 JCR: 1,044 - Q4 SCIE Artículo