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http://hdl.handle.net/10553/53411
| Title: | An energy relaxation time model for device simulation | Authors: | Gonzalez, B Palankovski, V Kosina, H Hernandez, A Selberherr, S |
UNESCO Clasification: | 3307 Tecnología electrónica | Keywords: | Energy relaxation time Simulation Models Devices Compounds |
Issue Date: | 1999 | Publisher: | 0038-1101 | Journal: | Solid-State Electronics | Abstract: | We present an empirical model for the electron energy relaxation time. It is based on Monte-Carlo simulation results and is applicable to all relevant diamond and zinc-blende structure semiconductors. The energy relaxation times are expressed as functions of the carrier and lattice temperatures, and in the case of semiconductor alloys, of the material composition. | URI: | http://hdl.handle.net/10553/46936 | ISSN: | 0038-1101 | DOI: | 10.1016/S0038-1101(99)00132-X | Source: | Solid-State Electronics[ISSN 0038-1101],v. 43 (9), p. 1791-1795 |
| Appears in Collections: | Artículos |
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