Please use this identifier to cite or link to this item:
http://hdl.handle.net/10553/53411
| DC Field | Value | Language |
|---|---|---|
| dc.contributor.author | Gonzalez, B | en_US |
| dc.contributor.author | Palankovski, V | en_US |
| dc.contributor.author | Kosina, H | en_US |
| dc.contributor.author | Hernandez, A | en_US |
| dc.contributor.author | Selberherr, S | en_US |
| dc.contributor.other | Selberherr, Siegfried | - |
| dc.contributor.other | Gonzalez, Benito | - |
| dc.date.accessioned | 2019-02-04T16:31:48Z | - |
| dc.date.available | 2019-02-04T16:31:48Z | - |
| dc.date.issued | 1999 | en_US |
| dc.identifier.issn | 0038-1101 | en_US |
| dc.identifier.uri | http://hdl.handle.net/10553/46936 | - |
| dc.description.abstract | We present an empirical model for the electron energy relaxation time. It is based on Monte-Carlo simulation results and is applicable to all relevant diamond and zinc-blende structure semiconductors. The energy relaxation times are expressed as functions of the carrier and lattice temperatures, and in the case of semiconductor alloys, of the material composition. | en_US |
| dc.language | eng | en_US |
| dc.publisher | 0038-1101 | - |
| dc.relation.ispartof | Solid-State Electronics | en_US |
| dc.source | Solid-State Electronics[ISSN 0038-1101],v. 43 (9), p. 1791-1795 | en_US |
| dc.subject | 3307 Tecnología electrónica | en_US |
| dc.subject.other | Energy relaxation time | en_US |
| dc.subject.other | Simulation | en_US |
| dc.subject.other | Models | en_US |
| dc.subject.other | Devices | en_US |
| dc.subject.other | Compounds | en_US |
| dc.title | An energy relaxation time model for device simulation | en_US |
| dc.type | info:eu-repo/semantics/article | en_US |
| dc.type | Article | en_US |
| dc.identifier.doi | 10.1016/S0038-1101(99)00132-X | en_US |
| dc.identifier.scopus | 0033185499 | - |
| dc.identifier.isi | 000083267700018 | - |
| dcterms.isPartOf | Solid-State Electronics | - |
| dcterms.source | Solid-State Electronics[ISSN 0038-1101],v. 43 (9), p. 1791-1795 | - |
| dc.contributor.authorscopusid | 56082155300 | - |
| dc.contributor.authorscopusid | 6603918695 | - |
| dc.contributor.authorscopusid | 8093959400 | - |
| dc.contributor.authorscopusid | 57194681887 | - |
| dc.contributor.authorscopusid | 8840302400 | - |
| dc.description.lastpage | 1795 | en_US |
| dc.identifier.issue | 9 | - |
| dc.description.firstpage | 1791 | en_US |
| dc.relation.volume | 43 | en_US |
| dc.investigacion | Ingeniería y Arquitectura | en_US |
| dc.type2 | Artículo | en_US |
| dc.identifier.wos | WOS:000083267700018 | - |
| dc.contributor.daisngid | 1092737 | - |
| dc.contributor.daisngid | 661000 | - |
| dc.contributor.daisngid | 69896 | - |
| dc.contributor.daisngid | 21037645 | - |
| dc.contributor.daisngid | 10181 | - |
| dc.identifier.investigatorRID | H-5933-2018 | - |
| dc.identifier.investigatorRID | H-6803-2015 | - |
| dc.utils.revision | Sí | en_US |
| dc.identifier.ulpgc | Sí | es |
| dc.description.jcr | 0,928 | |
| dc.description.jcrq | Q2 | |
| dc.description.scie | SCIE | |
| item.grantfulltext | none | - |
| item.fulltext | Sin texto completo | - |
| crisitem.author.dept | GIR IUMA: Tecnología Microelectrónica | - |
| crisitem.author.dept | IU de Microelectrónica Aplicada | - |
| crisitem.author.dept | Departamento de Ingeniería Electrónica y Automática | - |
| crisitem.author.orcid | 0000-0001-6864-9736 | - |
| crisitem.author.parentorg | IU de Microelectrónica Aplicada | - |
| crisitem.author.fullName | González Pérez, Benito | - |
| Appears in Collections: | Artículos | |
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