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Please use this identifier to cite or link to this item: https://accedacris.ulpgc.es/jspui/handle/10553/53411
DC FieldValueLanguage
dc.contributor.authorGonzalez, Ben_US
dc.contributor.authorPalankovski, Ven_US
dc.contributor.authorKosina, Hen_US
dc.contributor.authorHernandez, Aen_US
dc.contributor.authorSelberherr, Sen_US
dc.contributor.otherSelberherr, Siegfried-
dc.contributor.otherGonzalez, Benito-
dc.date.accessioned2019-02-04T16:31:48Z-
dc.date.available2019-02-04T16:31:48Z-
dc.date.issued1999en_US
dc.identifier.issn0038-1101en_US
dc.identifier.urihttps://accedacris.ulpgc.es/handle/10553/46936-
dc.description.abstractWe present an empirical model for the electron energy relaxation time. It is based on Monte-Carlo simulation results and is applicable to all relevant diamond and zinc-blende structure semiconductors. The energy relaxation times are expressed as functions of the carrier and lattice temperatures, and in the case of semiconductor alloys, of the material composition.en_US
dc.languageengen_US
dc.publisher0038-1101-
dc.relation.ispartofSolid-State Electronicsen_US
dc.sourceSolid-State Electronics[ISSN 0038-1101],v. 43 (9), p. 1791-1795en_US
dc.subject3307 Tecnología electrónicaen_US
dc.subject.otherEnergy relaxation timeen_US
dc.subject.otherSimulationen_US
dc.subject.otherModelsen_US
dc.subject.otherDevicesen_US
dc.subject.otherCompoundsen_US
dc.titleAn energy relaxation time model for device simulationen_US
dc.typeinfo:eu-repo/semantics/articleen_US
dc.typeArticleen_US
dc.identifier.doi10.1016/S0038-1101(99)00132-Xen_US
dc.identifier.scopus0033185499-
dc.identifier.isi000083267700018-
dcterms.isPartOfSolid-State Electronics-
dcterms.sourceSolid-State Electronics[ISSN 0038-1101],v. 43 (9), p. 1791-1795-
dc.contributor.authorscopusid56082155300-
dc.contributor.authorscopusid6603918695-
dc.contributor.authorscopusid8093959400-
dc.contributor.authorscopusid57194681887-
dc.contributor.authorscopusid8840302400-
dc.description.lastpage1795en_US
dc.identifier.issue9-
dc.description.firstpage1791en_US
dc.relation.volume43en_US
dc.investigacionIngeniería y Arquitecturaen_US
dc.type2Artículoen_US
dc.identifier.wosWOS:000083267700018-
dc.contributor.daisngid1092737-
dc.contributor.daisngid661000-
dc.contributor.daisngid69896-
dc.contributor.daisngid21037645-
dc.contributor.daisngid10181-
dc.identifier.investigatorRIDH-5933-2018-
dc.identifier.investigatorRIDH-6803-2015-
dc.utils.revisionSíen_US
dc.identifier.ulpgcSíes
dc.description.jcr0,928
dc.description.jcrqQ2
dc.description.scieSCIE
item.fulltextSin texto completo-
item.grantfulltextnone-
crisitem.author.deptGIR IUMA: Tecnología Microelectrónica-
crisitem.author.deptIU de Microelectrónica Aplicada-
crisitem.author.deptDepartamento de Ingeniería Electrónica y Automática-
crisitem.author.orcid0000-0001-6864-9736-
crisitem.author.parentorgIU de Microelectrónica Aplicada-
crisitem.author.fullNameGonzález Pérez, Benito-
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