1. accedaCRIS
  2. Publicaciones
  3. Artículos
Please use this identifier to cite or link to this item: http://hdl.handle.net/10553/53411
DC FieldValueLanguage
dc.contributor.authorGonzalez, Ben_US
dc.contributor.authorPalankovski, Ven_US
dc.contributor.authorKosina, Hen_US
dc.contributor.authorHernandez, Aen_US
dc.contributor.authorSelberherr, Sen_US
dc.contributor.otherSelberherr, Siegfried-
dc.contributor.otherGonzalez, Benito-
dc.date.accessioned2019-02-04T16:31:48Z-
dc.date.available2019-02-04T16:31:48Z-
dc.date.issued1999en_US
dc.identifier.issn0038-1101en_US
dc.identifier.urihttp://hdl.handle.net/10553/46936-
dc.description.abstractWe present an empirical model for the electron energy relaxation time. It is based on Monte-Carlo simulation results and is applicable to all relevant diamond and zinc-blende structure semiconductors. The energy relaxation times are expressed as functions of the carrier and lattice temperatures, and in the case of semiconductor alloys, of the material composition.en_US
dc.languageengen_US
dc.publisher0038-1101-
dc.relation.ispartofSolid-State Electronicsen_US
dc.sourceSolid-State Electronics[ISSN 0038-1101],v. 43 (9), p. 1791-1795en_US
dc.subject3307 Tecnología electrónicaen_US
dc.subject.otherEnergy relaxation timeen_US
dc.subject.otherSimulationen_US
dc.subject.otherModelsen_US
dc.subject.otherDevicesen_US
dc.subject.otherCompoundsen_US
dc.titleAn energy relaxation time model for device simulationen_US
dc.typeinfo:eu-repo/semantics/articleen_US
dc.typeArticleen_US
dc.identifier.doi10.1016/S0038-1101(99)00132-Xen_US
dc.identifier.scopus0033185499-
dc.identifier.isi000083267700018-
dcterms.isPartOfSolid-State Electronics-
dcterms.sourceSolid-State Electronics[ISSN 0038-1101],v. 43 (9), p. 1791-1795-
dc.contributor.authorscopusid56082155300-
dc.contributor.authorscopusid6603918695-
dc.contributor.authorscopusid8093959400-
dc.contributor.authorscopusid57194681887-
dc.contributor.authorscopusid8840302400-
dc.description.lastpage1795en_US
dc.identifier.issue9-
dc.description.firstpage1791en_US
dc.relation.volume43en_US
dc.investigacionIngeniería y Arquitecturaen_US
dc.type2Artículoen_US
dc.identifier.wosWOS:000083267700018-
dc.contributor.daisngid1092737-
dc.contributor.daisngid661000-
dc.contributor.daisngid69896-
dc.contributor.daisngid21037645-
dc.contributor.daisngid10181-
dc.identifier.investigatorRIDH-5933-2018-
dc.identifier.investigatorRIDH-6803-2015-
dc.utils.revisionSíen_US
dc.identifier.ulpgcSíes
dc.description.jcr0,928
dc.description.jcrqQ2
dc.description.scieSCIE
item.fulltextSin texto completo-
item.grantfulltextnone-
crisitem.author.deptGIR IUMA: Tecnología Microelectrónica-
crisitem.author.deptIU de Microelectrónica Aplicada-
crisitem.author.deptDepartamento de Ingeniería Electrónica y Automática-
crisitem.author.orcid0000-0001-6864-9736-
crisitem.author.parentorgIU de Microelectrónica Aplicada-
crisitem.author.fullNameGonzález Pérez, Benito-
Appears in Collections:Artículos
Show simple item record

SCOPUSTM   
Citations

41
checked on Jul 21, 2024

WEB OF SCIENCETM
Citations

42
checked on Jul 21, 2024

Page view(s)

46
checked on Jun 29, 2024

Google ScholarTM

Check

Altmetric


Share


Export metadata


Items in accedaCRIS are protected by copyright, with all rights reserved, unless otherwise indicated.