|Title:||Neu-MOS (νMOS) for smart sensors and extension to a novel neu-GaAs (νGaAs) paradigm||Authors:||Abbott, D.
Al-Sarawi, S. F.
|UNESCO Clasification:||3307 Tecnología electrónica||Issue Date:||1998||Journal:||Proceedings of the IEEE International Conference on Electronics, Circuits, and Systems||Abstract:||The neu-MOS (vMOS) transistor is a new device that enables the design of conventional digital and analog circuits, in standard CMOS, with a factor of 5-10 decrease gate count. Furthermore, vMOS circuit characteristics are insensitive to transistor parameter variations but instead rely on coupling capacitor ratios. In this paper, we demonstrate this principle with results from fabricated controlled gain amplifiers. This new technology is ideal for smart sensors where a high functionality per pixel area and good matching between pixels is required. Moreover, we discuss the advantages of smart sensors in GaAs technology and the viability of developing a vGaAs paradigm.||URI:||http://hdl.handle.net/10553/46937||Source:||Proceedings of the IEEE International Conference on Electronics, Circuits, and Systems,v. 3, p. 397-404|
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