|Title:||Characterization of extrinsic resistances in temperature behaviour modelling of InGaAs MODFETs||Authors:||González, B.
Hernández Ballester, Antonio
Del Pino, F. J.
Sendra, J. R.
Heterostructures, et al
|Issue Date:||2004||Publisher:||0268-1242||Journal:||Semiconductor Science and Technology||Abstract:||This work analyses the do response of InGaAs channel modulation-doped field-effect transistors, when varying temperature from 300 to 400 K. An analytical model for the intrinsic drain current is derived from previous work, carried out for a similar AlGaAs channel device, in order to show explicitly the temperature dependence. The extrinsic resistances are numerically evaluated and added in a straightforward form to the model. Experimental output characteristics at different temperatures of an InGaAs MODFET, in static operation, are compared with those offered by the resulting extrinsic model and numerical simulations. Computed relative errors are around 10%.||URI:||http://hdl.handle.net/10553/46927||ISSN:||0268-1242||DOI:||10.1088/0268-1242/19/5/015||Source:||Semiconductor Science and Technology[ISSN 0268-1242],v. 19, p. 648-654|
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