Please use this identifier to cite or link to this item: http://hdl.handle.net/10553/46910
Title: Large-Signal DG-MOSFET Modelling for RFID Rectification
Authors: Rodríguez, R.
González Pérez, Benito 
García, J. 
Lázaro, A.
Iñiguez, B.
Hernández Ballester, Antonio 
UNESCO Clasification: 3307 Tecnología electrónica
Keywords: Double-Gate
Power
Rectifier
Charge
Issue Date: 2016
Publisher: 1687-8108
Journal: Advances in Condensed Matter Physics 
Abstract: This paper analyses the undoped DG-MOSFETs capability for the operation of rectifiers for RFIDs andWireless Power Transmission (WPT) at microwave frequencies. For this purpose, a large-signal compact model has been developed and implemented in VerilogA. The model has been numerically validated with a device simulator (Sentaurus). It is found that the number of stages to achieve the optimal rectifier performance is inferior to that required with conventional MOSFETs. In addition, the DC output voltage could be incremented with the use of appropriate mid-gap metals for the gate, as TiN. Minor impact of short channel effects (SCEs) on rectification is also pointed out.
URI: http://hdl.handle.net/10553/46910
ISSN: 1687-8108
DOI: 10.1155/2016/8017139
Source: Advances in Condensed Matter Physics[ISSN 1687-8108],v. 2016 (8017139)
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