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http://hdl.handle.net/10553/46910
Title: | Large-Signal DG-MOSFET Modelling for RFID Rectification | Authors: | Rodríguez, R. González Pérez, Benito García, J. Lázaro, A. Iñiguez, B. Hernández Ballester, Antonio |
UNESCO Clasification: | 3307 Tecnología electrónica | Keywords: | Double-Gate Power Rectifier Charge |
Issue Date: | 2016 | Publisher: | 1687-8108 | Journal: | Advances in Condensed Matter Physics | Abstract: | This paper analyses the undoped DG-MOSFETs capability for the operation of rectifiers for RFIDs andWireless Power Transmission (WPT) at microwave frequencies. For this purpose, a large-signal compact model has been developed and implemented in VerilogA. The model has been numerically validated with a device simulator (Sentaurus). It is found that the number of stages to achieve the optimal rectifier performance is inferior to that required with conventional MOSFETs. In addition, the DC output voltage could be incremented with the use of appropriate mid-gap metals for the gate, as TiN. Minor impact of short channel effects (SCEs) on rectification is also pointed out. | URI: | http://hdl.handle.net/10553/46910 | ISSN: | 1687-8108 | DOI: | 10.1155/2016/8017139 | Source: | Advances in Condensed Matter Physics[ISSN 1687-8108],v. 2016 (8017139) |
Appears in Collections: | Artículos |
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