Identificador persistente para citar o vincular este elemento: http://hdl.handle.net/10553/46910
Título: Large-Signal DG-MOSFET Modelling for RFID Rectification
Autores/as: Rodríguez, R.
González Pérez, Benito 
García, J. 
Lázaro, A.
Iñiguez, B.
Hernández Ballester, Antonio 
Clasificación UNESCO: 3307 Tecnología electrónica
Palabras clave: Double-Gate
Power
Rectifier
Charge
Fecha de publicación: 2016
Editor/a: 1687-8108
Publicación seriada: Advances in Condensed Matter Physics 
Resumen: This paper analyses the undoped DG-MOSFETs capability for the operation of rectifiers for RFIDs andWireless Power Transmission (WPT) at microwave frequencies. For this purpose, a large-signal compact model has been developed and implemented in VerilogA. The model has been numerically validated with a device simulator (Sentaurus). It is found that the number of stages to achieve the optimal rectifier performance is inferior to that required with conventional MOSFETs. In addition, the DC output voltage could be incremented with the use of appropriate mid-gap metals for the gate, as TiN. Minor impact of short channel effects (SCEs) on rectification is also pointed out.
URI: http://hdl.handle.net/10553/46910
ISSN: 1687-8108
DOI: 10.1155/2016/8017139
Fuente: Advances in Condensed Matter Physics[ISSN 1687-8108],v. 2016 (8017139)
Colección:Artículos
miniatura
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