Please use this identifier to cite or link to this item: http://hdl.handle.net/10553/46910
DC FieldValueLanguage
dc.contributor.authorRodríguez, R.en_US
dc.contributor.authorGonzález Pérez, Benitoen_US
dc.contributor.authorGarcía, J.en_US
dc.contributor.authorLázaro, A.en_US
dc.contributor.authorIñiguez, B.en_US
dc.contributor.authorHernández Ballester, Antonioen_US
dc.contributor.otherGarcia Garcia, Javier-
dc.contributor.otherGonzalez, Benito-
dc.contributor.otherLazaro, Antonio-
dc.date.accessioned2018-11-23T09:20:32Z-
dc.date.available2018-11-23T09:20:32Z-
dc.date.issued2016en_US
dc.identifier.issn1687-8108en_US
dc.identifier.urihttp://hdl.handle.net/10553/46910-
dc.description.abstractThis paper analyses the undoped DG-MOSFETs capability for the operation of rectifiers for RFIDs andWireless Power Transmission (WPT) at microwave frequencies. For this purpose, a large-signal compact model has been developed and implemented in VerilogA. The model has been numerically validated with a device simulator (Sentaurus). It is found that the number of stages to achieve the optimal rectifier performance is inferior to that required with conventional MOSFETs. In addition, the DC output voltage could be incremented with the use of appropriate mid-gap metals for the gate, as TiN. Minor impact of short channel effects (SCEs) on rectification is also pointed out.en_US
dc.languageengen_US
dc.publisher1687-8108-
dc.relation.ispartofAdvances in Condensed Matter Physicsen_US
dc.sourceAdvances in Condensed Matter Physics[ISSN 1687-8108],v. 2016 (8017139)en_US
dc.subject3307 Tecnología electrónicaen_US
dc.subject.otherDouble-Gateen_US
dc.subject.otherPoweren_US
dc.subject.otherRectifieren_US
dc.subject.otherChargeen_US
dc.titleLarge-Signal DG-MOSFET Modelling for RFID Rectificationen_US
dc.typeinfo:eu-repo/semantics/Articleen_US
dc.typeArticleen_US
dc.identifier.doi10.1155/2016/8017139en_US
dc.identifier.scopus84994571219-
dc.identifier.isi000387511500001-
dcterms.isPartOfAdvances In Condensed Matter Physics-
dcterms.sourceAdvances In Condensed Matter Physics[ISSN 1687-8108]-
dc.contributor.authorscopusid7401544516-
dc.contributor.authorscopusid56082155300-
dc.contributor.authorscopusid8383160900-
dc.contributor.authorscopusid56036357200-
dc.contributor.authorscopusid55148428400-
dc.contributor.authorscopusid57194681887-
dc.identifier.issue8017139-
dc.relation.volume2016en_US
dc.investigacionIngeniería y Arquitecturaen_US
dc.type2Artículoen_US
dc.identifier.wosWOS:000387511500001-
dc.contributor.daisngid799688-
dc.contributor.daisngid1092737-
dc.contributor.daisngid1774718-
dc.contributor.daisngid56325-
dc.contributor.daisngid91160-
dc.contributor.daisngid2061817-
dc.contributor.daisngid13912365-
dc.identifier.investigatorRIDI-8093-2015-
dc.identifier.investigatorRIDNo ID-
dc.identifier.investigatorRIDNo ID-
dc.utils.revisionen_US
dc.contributor.wosstandardWOS:Rodriguez, R-
dc.contributor.wosstandardWOS:Gonzalez, B-
dc.contributor.wosstandardWOS:Garcia, J-
dc.contributor.wosstandardWOS:Lazaro, A-
dc.contributor.wosstandardWOS:Iniguez, B-
dc.contributor.wosstandardWOS:Hernandez, A-
dc.date.coverdateEnero 2016en_US
dc.identifier.ulpgcen_US
dc.contributor.buulpgcBU-TELen_US
dc.description.sjr0,232
dc.description.jcr1,044
dc.description.sjrqQ3
dc.description.jcrqQ4
dc.description.scieSCIE
item.fulltextCon texto completo-
item.grantfulltextopen-
crisitem.author.deptGIR IUMA: Tecnología Microelectrónica-
crisitem.author.deptIU de Microelectrónica Aplicada-
crisitem.author.deptDepartamento de Ingeniería Electrónica y Automática-
crisitem.author.deptGIR IUMA: Sistemas de Información y Comunicaciones-
crisitem.author.deptIU de Microelectrónica Aplicada-
crisitem.author.deptDepartamento de Ingeniería Electrónica y Automática-
crisitem.author.deptGIR IUMA: Sistemas de Información y Comunicaciones-
crisitem.author.deptIU de Microelectrónica Aplicada-
crisitem.author.deptDepartamento de Ingeniería Electrónica y Automática-
crisitem.author.orcid0000-0001-6864-9736-
crisitem.author.orcid0000-0003-3561-0135-
crisitem.author.parentorgIU de Microelectrónica Aplicada-
crisitem.author.parentorgIU de Microelectrónica Aplicada-
crisitem.author.parentorgIU de Microelectrónica Aplicada-
crisitem.author.fullNameGonzález Pérez, Benito-
crisitem.author.fullNameGarcía García, Javier-
crisitem.author.fullNameHernández Ballester, Antonio-
Appears in Collections:Artículos
Thumbnail
Adobe PDF (1,55 MB)
Show simple item record

SCOPUSTM   
Citations

1
checked on Dec 4, 2022

Page view(s)

28
checked on Sep 10, 2022

Download(s)

27
checked on Sep 10, 2022

Google ScholarTM

Check

Altmetric


Share



Export metadata



Items in accedaCRIS are protected by copyright, with all rights reserved, unless otherwise indicated.