Please use this identifier to cite or link to this item:
http://hdl.handle.net/10553/46910
| DC Field | Value | Language |
|---|---|---|
| dc.contributor.author | Rodríguez, R. | en_US |
| dc.contributor.author | González Pérez, Benito | en_US |
| dc.contributor.author | García, J. | en_US |
| dc.contributor.author | Lázaro, A. | en_US |
| dc.contributor.author | Iñiguez, B. | en_US |
| dc.contributor.author | Hernández Ballester, Antonio | en_US |
| dc.contributor.other | Garcia Garcia, Javier | - |
| dc.contributor.other | Gonzalez, Benito | - |
| dc.contributor.other | Lazaro, Antonio | - |
| dc.date.accessioned | 2018-11-23T09:20:32Z | - |
| dc.date.available | 2018-11-23T09:20:32Z | - |
| dc.date.issued | 2016 | en_US |
| dc.identifier.issn | 1687-8108 | en_US |
| dc.identifier.uri | http://hdl.handle.net/10553/46910 | - |
| dc.description.abstract | This paper analyses the undoped DG-MOSFETs capability for the operation of rectifiers for RFIDs andWireless Power Transmission (WPT) at microwave frequencies. For this purpose, a large-signal compact model has been developed and implemented in VerilogA. The model has been numerically validated with a device simulator (Sentaurus). It is found that the number of stages to achieve the optimal rectifier performance is inferior to that required with conventional MOSFETs. In addition, the DC output voltage could be incremented with the use of appropriate mid-gap metals for the gate, as TiN. Minor impact of short channel effects (SCEs) on rectification is also pointed out. | en_US |
| dc.language | eng | en_US |
| dc.publisher | 1687-8108 | - |
| dc.relation.ispartof | Advances in Condensed Matter Physics | en_US |
| dc.source | Advances in Condensed Matter Physics[ISSN 1687-8108],v. 2016 (8017139) | en_US |
| dc.subject | 3307 Tecnología electrónica | en_US |
| dc.subject.other | Double-Gate | en_US |
| dc.subject.other | Power | en_US |
| dc.subject.other | Rectifier | en_US |
| dc.subject.other | Charge | en_US |
| dc.title | Large-Signal DG-MOSFET Modelling for RFID Rectification | en_US |
| dc.type | info:eu-repo/semantics/Article | en_US |
| dc.type | Article | en_US |
| dc.identifier.doi | 10.1155/2016/8017139 | en_US |
| dc.identifier.scopus | 84994571219 | - |
| dc.identifier.isi | 000387511500001 | - |
| dcterms.isPartOf | Advances In Condensed Matter Physics | - |
| dcterms.source | Advances In Condensed Matter Physics[ISSN 1687-8108] | - |
| dc.contributor.authorscopusid | 7401544516 | - |
| dc.contributor.authorscopusid | 56082155300 | - |
| dc.contributor.authorscopusid | 8383160900 | - |
| dc.contributor.authorscopusid | 56036357200 | - |
| dc.contributor.authorscopusid | 55148428400 | - |
| dc.contributor.authorscopusid | 57194681887 | - |
| dc.identifier.issue | 8017139 | - |
| dc.relation.volume | 2016 | en_US |
| dc.investigacion | Ingeniería y Arquitectura | en_US |
| dc.type2 | Artículo | en_US |
| dc.identifier.wos | WOS:000387511500001 | - |
| dc.contributor.daisngid | 799688 | - |
| dc.contributor.daisngid | 1092737 | - |
| dc.contributor.daisngid | 1774718 | - |
| dc.contributor.daisngid | 56325 | - |
| dc.contributor.daisngid | 91160 | - |
| dc.contributor.daisngid | 2061817 | - |
| dc.contributor.daisngid | 13912365 | - |
| dc.identifier.investigatorRID | I-8093-2015 | - |
| dc.identifier.investigatorRID | No ID | - |
| dc.identifier.investigatorRID | No ID | - |
| dc.utils.revision | Sí | en_US |
| dc.contributor.wosstandard | WOS:Rodriguez, R | - |
| dc.contributor.wosstandard | WOS:Gonzalez, B | - |
| dc.contributor.wosstandard | WOS:Garcia, J | - |
| dc.contributor.wosstandard | WOS:Lazaro, A | - |
| dc.contributor.wosstandard | WOS:Iniguez, B | - |
| dc.contributor.wosstandard | WOS:Hernandez, A | - |
| dc.date.coverdate | Enero 2016 | en_US |
| dc.identifier.ulpgc | Sí | en_US |
| dc.contributor.buulpgc | BU-TEL | en_US |
| dc.description.sjr | 0,232 | |
| dc.description.jcr | 1,044 | |
| dc.description.sjrq | Q3 | |
| dc.description.jcrq | Q4 | |
| dc.description.scie | SCIE | |
| item.grantfulltext | open | - |
| item.fulltext | Con texto completo | - |
| crisitem.author.dept | GIR IUMA: Tecnología Microelectrónica | - |
| crisitem.author.dept | IU de Microelectrónica Aplicada | - |
| crisitem.author.dept | Departamento de Ingeniería Electrónica y Automática | - |
| crisitem.author.dept | GIR IUMA: Sistemas de Información y Comunicaciones | - |
| crisitem.author.dept | IU de Microelectrónica Aplicada | - |
| crisitem.author.dept | Departamento de Ingeniería Electrónica y Automática | - |
| crisitem.author.dept | GIR IUMA: Sistemas de Información y Comunicaciones | - |
| crisitem.author.dept | IU de Microelectrónica Aplicada | - |
| crisitem.author.dept | Departamento de Ingeniería Electrónica y Automática | - |
| crisitem.author.orcid | 0000-0001-6864-9736 | - |
| crisitem.author.orcid | 0000-0003-3561-0135 | - |
| crisitem.author.parentorg | IU de Microelectrónica Aplicada | - |
| crisitem.author.parentorg | IU de Microelectrónica Aplicada | - |
| crisitem.author.parentorg | IU de Microelectrónica Aplicada | - |
| crisitem.author.fullName | González Pérez, Benito | - |
| crisitem.author.fullName | García García, Javier Agustín | - |
| crisitem.author.fullName | Hernández Ballester, Antonio | - |
| Appears in Collections: | Artículos | |
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