Please use this identifier to cite or link to this item: http://hdl.handle.net/10553/46934
Title: Static simulation of pseudomorphic heterostructure FETs at medium/high temperatures
Authors: González, B. 
Hernández Ballester, Antonio 
González-Sanz, F.
Fernández De Ávila, S.
Nunez, A. 
UNESCO Clasification: 3307 Tecnología electrónica
Keywords: Electron-Mobility
Model
Transistors
Transport
Hfets
Issue Date: 2002
Publisher: 0268-1242
Journal: Semiconductor Science and Technology 
Abstract: The drain current in a pseudomorphic heterostructure FET (P-HFET) has a negative temperature dependence which is correctly predicted when the electron transport through the barriers is taken into account. In order to compare simulation with experimental results, the static output characteristics on a long gate P-HFET have been measured over the temperature range 260-380 K. Hall mobility measurements at different temperatures and gate bias are included in the simulations. The static characteristics are simulated using a thermlonic field emission model that calculates the current across the Al0.3Ga0.7As/In0.3Ga0.7As heterojunction, where the effective band discontinuity is controlled by means of a parameter called effective length, l(ef). In this paper the use of l(ef) as a fitting parameter for the static characteristic curves is investigated.
URI: http://hdl.handle.net/10553/46934
ISSN: 0268-1242
DOI: 10.1088/0268-1242/17/6/306
Source: Semiconductor Science and Technology[ISSN 0268-1242],v. 17, p. 534-539
Appears in Collections:Artículos
Show full item record

SCOPUSTM   
Citations

2
checked on Jun 26, 2022

WEB OF SCIENCETM
Citations

2
checked on Jun 26, 2022

Page view(s)

46
checked on Jun 19, 2022

Google ScholarTM

Check

Altmetric


Share



Export metadata



Items in accedaCRIS are protected by copyright, with all rights reserved, unless otherwise indicated.