Please use this identifier to cite or link to this item: http://hdl.handle.net/10553/43597
Title: Capacitive model for integrated PN varactors of cells with N+ buried layer
Authors: Marrero-Martín, M. 
García, J. 
González, B. 
Hernández Ballester, Antonio 
UNESCO Clasification: 3307 Tecnología electrónica
Issue Date: 2010
Journal: Spanish Conference on Electron Devices 
Conference: 7th Spanish Conference on Electron Devices (CDE 2009) 
Abstract: This paper is devoted to analyzing varactors based on PN junction cells in order to obtain a capacitance model for radiofrequency (RF) applications. A cell is the minimum structure that can be considered a varactor, including all necessary layers and connections. Then, a specific capacitance for a RF integrated circuit is obtained overlapping all necessary cells horizontally and vertically. Our model estimates the total capacitance in a varactor, from both ports, considering all relevant internal contributions. Ten varactors based on the same cell have been designed and fabricated in 0.35 µm SiGe technology. These novel structures were also measured on-wafer for frequencies ranging between 0.5 and 10 GHz, and voltages varying from 0 to -5 V. Our model predicts the capacitances in all cases with relative errors smaller than 10%
URI: http://hdl.handle.net/10553/43597
ISSN: 2163-4971
DOI: 10.1002/jnm.751
Source: Spanish Conference on Electron Devices [ISSN 2163-4971], v. 23 (4-5), p. 364-378
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