Please use this identifier to cite or link to this item: http://hdl.handle.net/10553/46916
Title: Numerical dc self-heating in planar double-gate MOSFETs
Authors: González, B. 
Iñiguez, B.
Lázaro, A.
Cerdeira, A.
UNESCO Clasification: 3307 Tecnología electrónica
Keywords: Thermal-Conductivity
Soi Mosfets
Transport
Simulation
Prediction, et al
Issue Date: 2011
Publisher: 0268-1242
Journal: Semiconductor Science and Technology 
Abstract: Self-heating in planar double-gate (DG) MOSFETs is numerically studied under static operating conditions. In order to correctly predict the lattice temperature inside the device and, consequently, the drain current, factors such as the reduction in thermal conductivity of thin films (temperature dependent), the influence of the buried oxide layer, the necessity of a hydrodynamic model and quantization are analysed to evidence their impact on a proper simulation of the dc transistor performance. This paper also shows that DG MOSFETs can be thermally optimized using flare extensions in all terminals and mid-gap gate metals with high thermal conductivity. Moreover, the influence of gate length and channel thickness on the peak temperature rise is studied. Other major technological changes, such as eliminating thin oxide films from channel extensions and using AlN instead of SiO2, are also discussed.
URI: http://hdl.handle.net/10553/46916
ISSN: 0268-1242
DOI: 10.1088/0268-1242/26/9/095014
Source: Semiconductor Science and Technology[ISSN 0268-1242],v. 26 (095014)
Appears in Collections:Artículos
Show full item record

SCOPUSTM   
Citations

7
checked on Jun 26, 2022

WEB OF SCIENCETM
Citations

5
checked on Jun 26, 2022

Page view(s)

7
checked on Jan 8, 2022

Google ScholarTM

Check

Altmetric


Share



Export metadata



Items in accedaCRIS are protected by copyright, with all rights reserved, unless otherwise indicated.