Identificador persistente para citar o vincular este elemento: http://hdl.handle.net/10553/46916
Título: Numerical dc self-heating in planar double-gate MOSFETs
Autores/as: González, B. 
Iñiguez, B.
Lázaro, A.
Cerdeira, A.
Clasificación UNESCO: 3307 Tecnología electrónica
Palabras clave: Thermal-Conductivity
Soi Mosfets
Transport
Simulation
Prediction, et al.
Fecha de publicación: 2011
Editor/a: 0268-1242
Publicación seriada: Semiconductor Science and Technology 
Resumen: Self-heating in planar double-gate (DG) MOSFETs is numerically studied under static operating conditions. In order to correctly predict the lattice temperature inside the device and, consequently, the drain current, factors such as the reduction in thermal conductivity of thin films (temperature dependent), the influence of the buried oxide layer, the necessity of a hydrodynamic model and quantization are analysed to evidence their impact on a proper simulation of the dc transistor performance. This paper also shows that DG MOSFETs can be thermally optimized using flare extensions in all terminals and mid-gap gate metals with high thermal conductivity. Moreover, the influence of gate length and channel thickness on the peak temperature rise is studied. Other major technological changes, such as eliminating thin oxide films from channel extensions and using AlN instead of SiO2, are also discussed.
URI: http://hdl.handle.net/10553/46916
ISSN: 0268-1242
DOI: 10.1088/0268-1242/26/9/095014
Fuente: Semiconductor Science and Technology[ISSN 0268-1242],v. 26 (095014)
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