Please use this identifier to cite or link to this item: http://hdl.handle.net/10553/46911
Title: Numerical simulation and compact modelling of AlGaN/GaN HEMTs with mitigation of self-heating effects by substrate materials
Authors: Rodríguez, Raúl 
González, Benito 
García, Javier 
Yigletu, Fetene M.
Tirado, José M.
Iñiguez, Benjamín
Nunez, Antonio 
UNESCO Clasification: 3307 Tecnología electrónica
Keywords: AlGaN
GaN
high electron mobility transistors
device simulations
self-heating, et al
Issue Date: 2015
Publisher: 1862-6300
Journal: Physica Status Solidi (A) Applications and Materials 
Conference: 8th International Workshop on Nitride Semiconductors(IWN 2014) 
Abstract: In this paper, DC characteristics of an AlGaN/GaN on sapphire high‐electron mobility transistor (HEMT) are measured, numerically simulated, and modelled accounting for self‐heating effects (SHEs), with the main electrical parameters being extracted. Decomposing the transistor thermal resistance into the buffer and substrate components, our study can be easily extended to other substrate materials. Thus, sapphire is substituted with silicon, molybdenum, and SiC, which reduce current‐collapse due to SHEs thanks to their considerably higher thermal conductivity, which improves transistor performance. Furthermore, we implement a compact model available for AlGaN/GaN HEMTs, incorporating the temperature dependence of extrinsic source/drain ohmic resistances, which are numerically evaluated for the different substrates.
URI: http://hdl.handle.net/10553/46911
ISSN: 1862-6300
DOI: 10.1002/pssa.201431897
Source: Physica Status Solidi (A) Applications and Materials Science[ISSN 1862-6300],v. 212, p. 1130-1136
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