Please use this identifier to cite or link to this item: http://hdl.handle.net/10553/46911
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dc.contributor.authorRodríguez, Raúlen_US
dc.contributor.authorGonzález, Benitoen_US
dc.contributor.authorGarcía, Javieren_US
dc.contributor.authorYigletu, Fetene M.en_US
dc.contributor.authorTirado, José M.en_US
dc.contributor.authorIñiguez, Benjamínen_US
dc.contributor.authorNunez, Antonioen_US
dc.contributor.otherGarcia Garcia, Javier-
dc.contributor.otherGonzalez, Benito-
dc.date.accessioned2018-11-23T09:21:02Z-
dc.date.available2018-11-23T09:21:02Z-
dc.date.issued2015en_US
dc.identifier.issn1862-6300en_US
dc.identifier.urihttp://hdl.handle.net/10553/46911-
dc.description.abstractIn this paper, DC characteristics of an AlGaN/GaN on sapphire high‐electron mobility transistor (HEMT) are measured, numerically simulated, and modelled accounting for self‐heating effects (SHEs), with the main electrical parameters being extracted. Decomposing the transistor thermal resistance into the buffer and substrate components, our study can be easily extended to other substrate materials. Thus, sapphire is substituted with silicon, molybdenum, and SiC, which reduce current‐collapse due to SHEs thanks to their considerably higher thermal conductivity, which improves transistor performance. Furthermore, we implement a compact model available for AlGaN/GaN HEMTs, incorporating the temperature dependence of extrinsic source/drain ohmic resistances, which are numerically evaluated for the different substrates.en_US
dc.languageengen_US
dc.publisher1862-6300-
dc.relation.ispartofPhysica Status Solidi (A) Applications and Materialsen_US
dc.sourcePhysica Status Solidi (A) Applications and Materials Science[ISSN 1862-6300],v. 212, p. 1130-1136en_US
dc.subject3307 Tecnología electrónicaen_US
dc.subject.otherAlGaNen_US
dc.subject.otherGaNen_US
dc.subject.otherhigh electron mobility transistorsen_US
dc.subject.otherdevice simulationsen_US
dc.subject.otherself-heatingen_US
dc.subject.othersubstratesen_US
dc.titleNumerical simulation and compact modelling of AlGaN/GaN HEMTs with mitigation of self-heating effects by substrate materialsen_US
dc.typeinfo:eu-repo/semantics/Articleen_US
dc.typeArticleen_US
dc.relation.conference8th International Workshop on Nitride Semiconductors(IWN 2014)
dc.identifier.doi10.1002/pssa.201431897
dc.identifier.scopus85028201866-
dc.identifier.isi000354405000038-
dcterms.isPartOfPhysica Status Solidi A-Applications And Materials Science-
dcterms.sourcePhysica Status Solidi A-Applications And Materials Science[ISSN 1862-6300],v. 212 (5), p. 1130-1136-
dc.contributor.authorscopusid7401544516-
dc.contributor.authorscopusid56082155300-
dc.contributor.authorscopusid8383160900-
dc.contributor.authorscopusid55576276800-
dc.contributor.authorscopusid8653120400-
dc.contributor.authorscopusid55148428400-
dc.contributor.authorscopusid7103279517-
dc.description.lastpage1136en_US
dc.description.firstpage1130en_US
dc.relation.volume212en_US
dc.investigacionIngeniería y Arquitecturaen_US
dc.type2Artículoen_US
dc.identifier.wosWOS:000354405000038-
dc.contributor.daisngid32207138
dc.contributor.daisngid3859066-
dc.contributor.daisngid1092737-
dc.contributor.daisngid1774718-
dc.contributor.daisngid3058706-
dc.contributor.daisngid4353013-
dc.contributor.daisngid91160-
dc.contributor.daisngid33795-
dc.identifier.investigatorRIDI-8093-2015-
dc.identifier.investigatorRIDH-6803-2015-
dc.utils.revisionen_US
dc.contributor.wosstandardWOS:Rodriguez, R
dc.contributor.wosstandardWOS:Gonzalez, B
dc.contributor.wosstandardWOS:Garcia, J
dc.contributor.wosstandardWOS:Yigletu, FM
dc.contributor.wosstandardWOS:Tirado, JM
dc.contributor.wosstandardWOS:Iniguez, B
dc.contributor.wosstandardWOS:Nunez, A
dc.date.coverdateMayo 2015
dc.identifier.conferenceidevents120910
dc.identifier.ulpgces
dc.description.sjr0,688
dc.description.jcr1,648
dc.description.sjrqQ2
dc.description.jcrqQ2
dc.description.scieSCIE
item.grantfulltextopen-
item.fulltextCon texto completo-
crisitem.event.eventsstartdate24-08-2015-
crisitem.event.eventsenddate29-08-2015-
crisitem.author.deptGIR IUMA: Tecnología Microelectrónica-
crisitem.author.deptIU de Microelectrónica Aplicada-
crisitem.author.deptDepartamento de Ingeniería Electrónica y Automática-
crisitem.author.deptGIR IUMA: Sistemas de Información y Comunicaciones-
crisitem.author.deptIU de Microelectrónica Aplicada-
crisitem.author.deptDepartamento de Ingeniería Electrónica y Automática-
crisitem.author.deptGIR IUMA: Sistemas de Información y Comunicaciones-
crisitem.author.deptIU de Microelectrónica Aplicada-
crisitem.author.deptDepartamento de Ingeniería Electrónica y Automática-
crisitem.author.orcid0000-0002-4457-8942-
crisitem.author.orcid0000-0001-6864-9736-
crisitem.author.orcid0000-0003-3561-0135-
crisitem.author.orcid0000-0003-1295-1594-
crisitem.author.parentorgIU de Microelectrónica Aplicada-
crisitem.author.parentorgIU de Microelectrónica Aplicada-
crisitem.author.parentorgIU de Microelectrónica Aplicada-
crisitem.author.fullNameRodríguez Del Rosario, Raúl-
crisitem.author.fullNameGonzález Pérez, Benito-
crisitem.author.fullNameGarcía García, Javier-
crisitem.author.fullNameNúñez Ordóñez, Antonio-
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