Please use this identifier to cite or link to this item: http://hdl.handle.net/10553/43590
Title: N-well resistance modelling in Q-factor of doughnut-shaped PN varactors
Authors: Marrero-Martín, M. 
González, B. 
García, J. 
Hernández, A.
UNESCO Clasification: 3307 Tecnología electrónica
Keywords: PN varactorN-well resistancePhysically-based modellingQ-factor
Issue Date: 2015
Publisher: 0038-1101
Journal: Solid-State Electronics 
Abstract: In this paper the N-well resistance in doughnut-shaped PN varactors, with the cathode connected to an N+ buried layer, has been modelled. The proposed expression for the N-well resistance, numerically validated, is based on the device geometry and overlapping of adjacent basic cells, and adequately reproduces its applied reverse bias voltage dependency. Once the varactor extrinsic parasitic components are extracted considering proximity effects, from anode-to-cathode measured RF admittances, and frequencies ranging from 0.5 GHz to 10 GHz, the impact of the N-well resistance on the experimental varactor quality factor is determined for reverse biases up to 5 V.
URI: http://hdl.handle.net/10553/43590
ISSN: 0038-1101
DOI: 10.1016/j.sse.2014.10.005
WOS:000346547400017
Source: Solid-State Electronics[ISSN 0038-1101],v. 103, p. 104-109
Appears in Collections:Artículos
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