Please use this identifier to cite or link to this item: http://hdl.handle.net/10553/43590
|Title:||N-well resistance modelling in Q-factor of doughnut-shaped PN varactors||Authors:||Marrero-Martín, M.
|UNESCO Clasification:||3307 Tecnología electrónica||Keywords:||PN varactorN-well resistancePhysically-based modellingQ-factor||Issue Date:||2015||Publisher:||0038-1101||Journal:||Solid-State Electronics||Abstract:||In this paper the N-well resistance in doughnut-shaped PN varactors, with the cathode connected to an N+ buried layer, has been modelled. The proposed expression for the N-well resistance, numerically validated, is based on the device geometry and overlapping of adjacent basic cells, and adequately reproduces its applied reverse bias voltage dependency. Once the varactor extrinsic parasitic components are extracted considering proximity effects, from anode-to-cathode measured RF admittances, and frequencies ranging from 0.5 GHz to 10 GHz, the impact of the N-well resistance on the experimental varactor quality factor is determined for reverse biases up to 5 V.||URI:||http://hdl.handle.net/10553/43590||ISSN:||0038-1101||DOI:||10.1016/j.sse.2014.10.005
|Source:||Solid-State Electronics[ISSN 0038-1101],v. 103, p. 104-109|
|Appears in Collections:||Artículos|
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