Identificador persistente para citar o vincular este elemento: http://hdl.handle.net/10553/43590
Título: N-well resistance modelling in Q-factor of doughnut-shaped PN varactors
Autores/as: Marrero-Martín, M. 
González, B. 
García, J. 
Hernández Ballester, Antonio 
Clasificación UNESCO: 3307 Tecnología electrónica
Palabras clave: PN varactor
Physically-based modelling
Q-factor
N-well resistance
Fecha de publicación: 2015
Editor/a: 0038-1101
Publicación seriada: Solid-State Electronics 
Resumen: In this paper the N-well resistance in doughnut-shaped PN varactors, with the cathode connected to an N+ buried layer, has been modelled. The proposed expression for the N-well resistance, numerically validated, is based on the device geometry and overlapping of adjacent basic cells, and adequately reproduces its applied reverse bias voltage dependency. Once the varactor extrinsic parasitic components are extracted considering proximity effects, from anode-to-cathode measured RF admittances, and frequencies ranging from 0.5 GHz to 10 GHz, the impact of the N-well resistance on the experimental varactor quality factor is determined for reverse biases up to 5 V.
URI: http://hdl.handle.net/10553/43590
ISSN: 0038-1101
DOI: 10.1016/j.sse.2014.10.005
Fuente: Solid-State Electronics[ISSN 0038-1101],v. 103, p. 104-109
Colección:Artículos
Adobe PDF (3,21 MB)
Vista completa

Visitas

100
actualizado el 04-may-2024

Descargas

8
actualizado el 04-may-2024

Google ScholarTM

Verifica

Altmetric


Comparte



Exporta metadatos



Los elementos en ULPGC accedaCRIS están protegidos por derechos de autor con todos los derechos reservados, a menos que se indique lo contrario.