Please use this identifier to cite or link to this item: http://hdl.handle.net/10553/35422
Title: Electrothermal DC characterization of GaN on Si MOS-HEMTs
Authors: Rodríguez, R. 
González, B. 
García, J. 
Núñez, A. 
UNESCO Clasification: 3304 Tecnología de los ordenadores
Keywords: AlGaN/GaN
MOS-HEMT on Si
Temperature
Thermal resistance
Self-heating, et al
Issue Date: 2017
Journal: Solid-State Electronics 
Abstract: DC characteristics of AlGaN/GaN on Si single finger MOS-HEMTs, for different gate geometries, have been measured and numerically simulated with substrate temperatures up to 150 degrees C. Defect density, depending on gate width, and thermal resistance, depending additionally on temperature, are extracted from transfer characteristics displacement and the AC output conductance method, respectively, and modeled for numerical simulations with Atlas. The thermal conductivity degradation in thin films is also included for accurate simulation of the heating response. With an appropriate methodology, the internal model parameters for temperature dependencies have been established. The numerical simulations show a relative error lower than 4.6% overall, for drain current and channel temperature behavior, and account for the measured device temperature decrease with the channel length increase as well as with the channel width reduction, for a set bias.
URI: http://hdl.handle.net/10553/35422
ISSN: 0038-1101
DOI: 10.1016/j.sse.2017.08.002
Source: Solid-State Electronics[ISSN 0038-1101],v. 137, p. 44-51
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