Please use this identifier to cite or link to this item: http://hdl.handle.net/10553/76430
Title: Geometric Modeling of Thermal Resistance in GaN HEMTs on Silicon
Authors: Gonzalez, Benito 
De Santi, Carlo
Rampazzo, Fabiana
Meneghini, Matteo
Núñez Ordóñez, Antonio 
Zanoni, Enrico
Meneghesso, Gaudenzio
UNESCO Clasification: 3307 Tecnología electrónica
Keywords: Channel temperature
Electrothermal characterization
Gallium nitride
High-electron mobility transistors (HEMTs)
Thermal resistance
Issue Date: 2020
Journal: IEEE Transactions on Electron Devices 
Abstract: In this article, pulsed measurements ofthermal resistance in GaN-based high-electron mobil-ity transistors (HEMTs) on silicon, with different gategeometries and gate-to-drain extensions, are analyzed andmodeled. Simple expressions for the thermal resistanceof silicon-on-insulator (SOI) MOSFETs, which take intoaccount the gate width and channel length, can be adaptedto model the thermal resistance of these GaN-based HEMTs.Narrow width effects and the increase in the heat flowthrough the gate as the channel length increases werecorrectly reproduced. In addition, numerical simulationswere performed to explain the reduction obtained in ther-mal resistance as the gate-to-drain extension increases.Our approach can also be applied easily to other well-established models using circuit simulators.
URI: http://hdl.handle.net/10553/76430
ISSN: 0018-9383
DOI: 10.1109/TED.2020.3028358
Source: IEEE Transactions on Electron Devices [ISSN 0018-9383], v. 67 (12), p. 5408-5414, (Diciembre 2020)
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