Please use this identifier to cite or link to this item: http://hdl.handle.net/10553/76430
DC FieldValueLanguage
dc.contributor.authorGonzalez, Benitoen_US
dc.contributor.authorDe Santi, Carloen_US
dc.contributor.authorRampazzo, Fabianaen_US
dc.contributor.authorMeneghini, Matteoen_US
dc.contributor.authorNúñez Ordóñez, Antonioen_US
dc.contributor.authorZanoni, Enricoen_US
dc.contributor.authorMeneghesso, Gaudenzioen_US
dc.date.accessioned2020-12-09T09:51:53Z-
dc.date.available2020-12-09T09:51:53Z-
dc.date.issued2020en_US
dc.identifier.issn0018-9383en_US
dc.identifier.otherScopus-
dc.identifier.urihttp://hdl.handle.net/10553/76430-
dc.description.abstractIn this article, pulsed measurements ofthermal resistance in GaN-based high-electron mobil-ity transistors (HEMTs) on silicon, with different gategeometries and gate-to-drain extensions, are analyzed andmodeled. Simple expressions for the thermal resistanceof silicon-on-insulator (SOI) MOSFETs, which take intoaccount the gate width and channel length, can be adaptedto model the thermal resistance of these GaN-based HEMTs.Narrow width effects and the increase in the heat flowthrough the gate as the channel length increases werecorrectly reproduced. In addition, numerical simulationswere performed to explain the reduction obtained in ther-mal resistance as the gate-to-drain extension increases.Our approach can also be applied easily to other well-established models using circuit simulators.en_US
dc.languageengen_US
dc.relation.ispartofIEEE Transactions on Electron Devicesen_US
dc.sourceIEEE Transactions on Electron Devices [ISSN 0018-9383], v. 67 (12), p. 5408-5414, (Diciembre 2020)en_US
dc.subject3307 Tecnología electrónicaen_US
dc.subject.otherChannel temperature-
dc.subject.otherElectrothermal characterization-
dc.subject.otherGallium nitride-
dc.subject.otherHigh-electron mobility transistors (HEMTs)-
dc.subject.otherThermal resistance-
dc.titleGeometric Modeling of Thermal Resistance in GaN HEMTs on Siliconen_US
dc.typeinfo:eu-repo/semantics/Articleen_US
dc.typeArticleen_US
dc.identifier.doi10.1109/TED.2020.3028358en_US
dc.identifier.scopus85097401140-
dc.contributor.authorscopusid56082155300-
dc.contributor.authorscopusid45861123600-
dc.contributor.authorscopusid7004372322-
dc.contributor.authorscopusid8913979700-
dc.contributor.authorscopusid7103279517-
dc.contributor.authorscopusid7005980398-
dc.contributor.authorscopusid56962704900-
dc.identifier.eissn1557-9646-
dc.description.lastpage5414en_US
dc.identifier.issue12-
dc.description.firstpage5408en_US
dc.relation.volume67en_US
dc.investigacionCiencias-
dc.type2Artículoen_US
dc.utils.revision-
dc.date.coverdateDiciembre 2020en_US
dc.identifier.ulpgc-
dc.contributor.buulpgcBU-TELen_US
dc.description.sjr0,828
dc.description.jcr2,917
dc.description.sjrqQ1
dc.description.jcrqQ2
dc.description.scieSCIE
item.grantfulltextopen-
item.fulltextCon texto completo-
crisitem.author.deptGIR IUMA Sistemas de Información y Comunicaciones-
crisitem.author.deptIU de Microelectrónica Aplicada-
crisitem.author.deptDepartamento de Ingeniería Electrónica y Automática-
crisitem.author.deptGIR IUMA Sistemas de Información y Comunicaciones-
crisitem.author.deptIU de Microelectrónica Aplicada-
crisitem.author.deptDepartamento de Ingeniería Electrónica y Automática-
crisitem.author.orcid0000-0001-6864-9736-
crisitem.author.orcid0000-0003-1295-1594-
crisitem.author.parentorgIU de Microelectrónica Aplicada-
crisitem.author.parentorgIU de Microelectrónica Aplicada-
crisitem.author.fullNameGonzález Pérez, Benito-
crisitem.author.fullNameNúñez Ordóñez, Antonio-
Appears in Collections:Artículos
Thumbnail
Adobe PDF (1,63 MB)
Show simple item record

SCOPUSTM   
Citations

1
checked on Jun 26, 2022

Page view(s)

71
checked on May 21, 2022

Download(s)

152
checked on May 21, 2022

Google ScholarTM

Check

Altmetric


Share



Export metadata



Items in accedaCRIS are protected by copyright, with all rights reserved, unless otherwise indicated.