Please use this identifier to cite or link to this item: http://hdl.handle.net/10553/128834
Title: A Simple Method to Extract the Thermal Resistance of GaN HEMTs From De-Trapping Characteristics
Authors: González, Benito 
Luis C. Nunes
Jo ao L. Gomes
Joana C. Mendes
José L. Jiménez
UNESCO Clasification: 3307 Tecnología electrónica
Keywords: Thermal resistance
MODFETs
HEMTs
Temperature measurement
Power dissipation
Issue Date: 2023
Journal: IEEE Electron Device Letters 
Abstract: This letter proposes a new method for extracting the thermal resistance of GaN-based HEMTs using pulse recovery data. After the device temperature and trapping state are established from different quiescent power dissipations for several base-plate temperatures, the recovery profile of the drain current is measured. The recovery time is then used as a temperature-sensitive electrical parameter to extract the thermal resistance of the device. The proposed method has been applied to a Schottky-gate HEMT on SiC, for which a thermal resistance of 15.7 °C-mm/W was extracted, a value in good agreement with others reported for similar devices. Comparison with the one obtained from a step response is also done. Finally, the uncertainties of the proposed method related to the pulse width, temperature, percentage of the drain current recovery time, and averaging procedure are discussed.
URI: http://hdl.handle.net/10553/128834
DOI: 10.1109/LED.2023.3265766
Source: IEEE Electron Device Letters, vol. 44, no. 6, pp. 891-894
Appears in Collections:Artículos
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