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Title: | A Simple Method to Extract the Thermal Resistance of GaN HEMTs From De-Trapping Characteristics | Authors: | González, Benito Luis C. Nunes Jo ao L. Gomes Joana C. Mendes José L. Jiménez |
UNESCO Clasification: | 3307 Tecnología electrónica | Keywords: | Thermal resistance MODFETs HEMTs Temperature measurement Power dissipation |
Issue Date: | 2023 | Journal: | IEEE Electron Device Letters | Abstract: | This letter proposes a new method for extracting the thermal resistance of GaN-based HEMTs using pulse recovery data. After the device temperature and trapping state are established from different quiescent power dissipations for several base-plate temperatures, the recovery profile of the drain current is measured. The recovery time is then used as a temperature-sensitive electrical parameter to extract the thermal resistance of the device. The proposed method has been applied to a Schottky-gate HEMT on SiC, for which a thermal resistance of 15.7 °C-mm/W was extracted, a value in good agreement with others reported for similar devices. Comparison with the one obtained from a step response is also done. Finally, the uncertainties of the proposed method related to the pulse width, temperature, percentage of the drain current recovery time, and averaging procedure are discussed. | URI: | http://hdl.handle.net/10553/128834 | DOI: | 10.1109/LED.2023.3265766 | Source: | IEEE Electron Device Letters, vol. 44, no. 6, pp. 891-894 |
Appears in Collections: | Artículos |
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