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http://hdl.handle.net/10553/55402
| Título: | Numerical Simulation for DC Schottky Gate Leakage Current in AlGaN/GaN HEMTs | Autores/as: | Rodríguez, R. González, B. García, J. Núñez, A. Toulon, G. Morancho, F. |
Clasificación UNESCO: | 3307 Tecnología electrónica | Palabras clave: | TCAD AlGaN/GaN HEMT on Si Trapping effects Schottky gate |
Fecha de publicación: | 2018 | Publicación seriada: | Spanish Conference on Electron Devices | Conferencia: | 12th Spanish Conference on Electron Devices, CDE 2018 | Resumen: | Different causes of the gate leakage origin in AlGaN/GaN HEMTs on Si have been studied through numerical simulations. Based on DC measured results and employing Sentaurus Device, different trap effects under the Schottky gate must be included to reproduce the measured transfer characteristics in subthreshold regime. Additionally, numerical simulation aspects for GaN-based HEMTs are also detailed. | URI: | http://hdl.handle.net/10553/55402 | ISBN: | 978-1-5386-5779-9 | ISSN: | 2163-4971 | DOI: | 10.1109/CDE.2018.8596883 | Fuente: | Proceedings of the 2018 12th Spanish Conference on Electron Devices, CDE 2018 | URL: | https://api.elsevier.com/content/abstract/scopus_id/85061488527 |
| Colección: | Actas de congresos |
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