Please use this identifier to cite or link to this item: http://hdl.handle.net/10553/55402
Title: Numerical Simulation for DC Schottky Gate Leakage Current in AlGaN/GaN HEMTs
Authors: Rodríguez, R. 
González, B. 
García, J. 
Núñez, A. 
Toulon, G.
Morancho, F.
UNESCO Clasification: 3307 Tecnología electrónica
Keywords: TCAD
AlGaN/GaN HEMT on Si
Trapping effects
Schottky gate
Issue Date: 2018
Journal: Spanish Conference on Electron Devices 
Conference: 12th Spanish Conference on Electron Devices, CDE 2018 
Abstract: Different causes of the gate leakage origin in AlGaN/GaN HEMTs on Si have been studied through numerical simulations. Based on DC measured results and employing Sentaurus Device, different trap effects under the Schottky gate must be included to reproduce the measured transfer characteristics in subthreshold regime. Additionally, numerical simulation aspects for GaN-based HEMTs are also detailed.
URI: http://hdl.handle.net/10553/55402
ISBN: 978-1-5386-5779-9
ISSN: 2163-4971
DOI: 10.1109/CDE.2018.8596883
Source: Proceedings of the 2018 12th Spanish Conference on Electron Devices, CDE 2018
URL: https://api.elsevier.com/content/abstract/scopus_id/85061488527
Appears in Collections:Actas de congresos
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