Identificador persistente para citar o vincular este elemento:
http://hdl.handle.net/10553/55402
Campo DC | Valor | idioma |
---|---|---|
dc.contributor.author | Rodríguez, R. | en_US |
dc.contributor.author | González, B. | en_US |
dc.contributor.author | García, J. | en_US |
dc.contributor.author | Núñez, A. | en_US |
dc.contributor.author | Toulon, G. | en_US |
dc.contributor.author | Morancho, F. | en_US |
dc.date.accessioned | 2019-05-16T10:35:06Z | - |
dc.date.available | 2019-05-16T10:35:06Z | - |
dc.date.issued | 2018 | en_US |
dc.identifier.isbn | 978-1-5386-5779-9 | en_US |
dc.identifier.issn | 2163-4971 | en_US |
dc.identifier.other | WoS | - |
dc.identifier.uri | http://hdl.handle.net/10553/55402 | - |
dc.description.abstract | Different causes of the gate leakage origin in AlGaN/GaN HEMTs on Si have been studied through numerical simulations. Based on DC measured results and employing Sentaurus Device, different trap effects under the Schottky gate must be included to reproduce the measured transfer characteristics in subthreshold regime. Additionally, numerical simulation aspects for GaN-based HEMTs are also detailed. | en_US |
dc.language | eng | en_US |
dc.relation.ispartof | Spanish Conference on Electron Devices | en_US |
dc.source | Proceedings of the 2018 12th Spanish Conference on Electron Devices, CDE 2018 | en_US |
dc.subject | 3307 Tecnología electrónica | en_US |
dc.subject.other | TCAD | en_US |
dc.subject.other | AlGaN/GaN HEMT on Si | en_US |
dc.subject.other | Trapping effects | en_US |
dc.subject.other | Schottky gate | en_US |
dc.title | Numerical Simulation for DC Schottky Gate Leakage Current in AlGaN/GaN HEMTs | en_US |
dc.type | info:eu-repo/semantics/conferenceObject | en_US |
dc.type | ConferenceObject | en_US |
dc.relation.conference | 12th Spanish Conference on Electron Devices, CDE 2018 | en_US |
dc.identifier.doi | 10.1109/CDE.2018.8596883 | en_US |
dc.identifier.scopus | 85061488527 | - |
dc.identifier.isi | 000459616700008 | - |
dc.identifier.url | https://api.elsevier.com/content/abstract/scopus_id/85061488527 | - |
dc.contributor.orcid | #NODATA# | - |
dc.contributor.orcid | #NODATA# | - |
dc.contributor.orcid | #NODATA# | - |
dc.contributor.orcid | #NODATA# | - |
dc.contributor.orcid | #NODATA# | - |
dc.contributor.orcid | #NODATA# | - |
dc.contributor.authorscopusid | 7401544516 | - |
dc.contributor.authorscopusid | 56082155300 | - |
dc.contributor.authorscopusid | 8383160900 | - |
dc.contributor.authorscopusid | 7103279517 | - |
dc.contributor.authorscopusid | 35224166900 | - |
dc.contributor.authorscopusid | 6602208166 | - |
dc.description.lastpage | 4 | en_US |
dc.description.firstpage | 1 | en_US |
dc.investigacion | Ingeniería y Arquitectura | en_US |
dc.type2 | Actas de congresos | en_US |
dc.contributor.daisngid | 29724972 | - |
dc.contributor.daisngid | 7321859 | - |
dc.contributor.daisngid | 29725521 | - |
dc.contributor.daisngid | 33795 | - |
dc.contributor.daisngid | 3943943 | - |
dc.contributor.daisngid | 830347 | - |
dc.description.numberofpages | 4 | en_US |
dc.identifier.eisbn | 978-1-5386-5779-9 | - |
dc.utils.revision | Sí | en_US |
dc.contributor.wosstandard | WOS:Rodriguez, R | - |
dc.contributor.wosstandard | WOS:Gonzalez, B | - |
dc.contributor.wosstandard | WOS:Garcia, J | - |
dc.contributor.wosstandard | WOS:Nunez, A | - |
dc.contributor.wosstandard | WOS:Toulon, G | - |
dc.contributor.wosstandard | WOS:Morancho, F | - |
dc.identifier.conferenceid | events121141 | - |
dc.identifier.ulpgc | Sí | en_US |
dc.contributor.buulpgc | BU-TEL | en_US |
item.grantfulltext | open | - |
item.fulltext | Con texto completo | - |
crisitem.event.eventsstartdate | 14-11-2018 | - |
crisitem.event.eventsenddate | 16-11-2018 | - |
crisitem.author.dept | GIR IUMA: Tecnología Microelectrónica | - |
crisitem.author.dept | IU de Microelectrónica Aplicada | - |
crisitem.author.dept | Departamento de Ingeniería Electrónica y Automática | - |
crisitem.author.dept | GIR IUMA: Sistemas de Información y Comunicaciones | - |
crisitem.author.dept | IU de Microelectrónica Aplicada | - |
crisitem.author.dept | Departamento de Ingeniería Electrónica y Automática | - |
crisitem.author.dept | GIR IUMA: Sistemas de Información y Comunicaciones | - |
crisitem.author.dept | IU de Microelectrónica Aplicada | - |
crisitem.author.dept | Departamento de Ingeniería Electrónica y Automática | - |
crisitem.author.orcid | 0000-0002-4457-8942 | - |
crisitem.author.orcid | 0000-0001-6864-9736 | - |
crisitem.author.orcid | 0000-0003-3561-0135 | - |
crisitem.author.orcid | 0000-0003-1295-1594 | - |
crisitem.author.parentorg | IU de Microelectrónica Aplicada | - |
crisitem.author.parentorg | IU de Microelectrónica Aplicada | - |
crisitem.author.parentorg | IU de Microelectrónica Aplicada | - |
crisitem.author.fullName | Rodríguez Del Rosario, Raúl | - |
crisitem.author.fullName | González Pérez, Benito | - |
crisitem.author.fullName | García García, Javier Agustín | - |
crisitem.author.fullName | Núñez Ordóñez, Antonio | - |
Colección: | Actas de congresos |
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