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Please use this identifier to cite or link to this item: http://hdl.handle.net/10553/55402
DC FieldValueLanguage
dc.contributor.authorRodríguez, R.en_US
dc.contributor.authorGonzález, B.en_US
dc.contributor.authorGarcía, J.en_US
dc.contributor.authorNúñez, A.en_US
dc.contributor.authorToulon, G.en_US
dc.contributor.authorMorancho, F.en_US
dc.date.accessioned2019-05-16T10:35:06Z-
dc.date.available2019-05-16T10:35:06Z-
dc.date.issued2018en_US
dc.identifier.isbn978-1-5386-5779-9en_US
dc.identifier.issn2163-4971en_US
dc.identifier.otherWoS-
dc.identifier.urihttp://hdl.handle.net/10553/55402-
dc.description.abstractDifferent causes of the gate leakage origin in AlGaN/GaN HEMTs on Si have been studied through numerical simulations. Based on DC measured results and employing Sentaurus Device, different trap effects under the Schottky gate must be included to reproduce the measured transfer characteristics in subthreshold regime. Additionally, numerical simulation aspects for GaN-based HEMTs are also detailed.en_US
dc.languageengen_US
dc.relation.ispartofSpanish Conference on Electron Devicesen_US
dc.sourceProceedings of the 2018 12th Spanish Conference on Electron Devices, CDE 2018en_US
dc.subject3307 Tecnología electrónicaen_US
dc.subject.otherTCADen_US
dc.subject.otherAlGaN/GaN HEMT on Sien_US
dc.subject.otherTrapping effectsen_US
dc.subject.otherSchottky gateen_US
dc.titleNumerical Simulation for DC Schottky Gate Leakage Current in AlGaN/GaN HEMTsen_US
dc.typeinfo:eu-repo/semantics/conferenceObjecten_US
dc.typeConferenceObjecten_US
dc.relation.conference12th Spanish Conference on Electron Devices, CDE 2018en_US
dc.identifier.doi10.1109/CDE.2018.8596883en_US
dc.identifier.scopus85061488527-
dc.identifier.isi000459616700008-
dc.identifier.urlhttps://api.elsevier.com/content/abstract/scopus_id/85061488527-
dc.contributor.orcid#NODATA#-
dc.contributor.orcid#NODATA#-
dc.contributor.orcid#NODATA#-
dc.contributor.orcid#NODATA#-
dc.contributor.orcid#NODATA#-
dc.contributor.orcid#NODATA#-
dc.contributor.authorscopusid7401544516-
dc.contributor.authorscopusid56082155300-
dc.contributor.authorscopusid8383160900-
dc.contributor.authorscopusid7103279517-
dc.contributor.authorscopusid35224166900-
dc.contributor.authorscopusid6602208166-
dc.description.lastpage4en_US
dc.description.firstpage1en_US
dc.investigacionIngeniería y Arquitecturaen_US
dc.type2Actas de congresosen_US
dc.contributor.daisngid29724972-
dc.contributor.daisngid7321859-
dc.contributor.daisngid29725521-
dc.contributor.daisngid33795-
dc.contributor.daisngid3943943-
dc.contributor.daisngid830347-
dc.description.numberofpages4en_US
dc.identifier.eisbn978-1-5386-5779-9-
dc.utils.revisionSíen_US
dc.contributor.wosstandardWOS:Rodriguez, R-
dc.contributor.wosstandardWOS:Gonzalez, B-
dc.contributor.wosstandardWOS:Garcia, J-
dc.contributor.wosstandardWOS:Nunez, A-
dc.contributor.wosstandardWOS:Toulon, G-
dc.contributor.wosstandardWOS:Morancho, F-
dc.identifier.conferenceidevents121141-
dc.identifier.ulpgcSíen_US
dc.contributor.buulpgcBU-TELen_US
item.grantfulltextopen-
item.fulltextCon texto completo-
crisitem.event.eventsstartdate14-11-2018-
crisitem.event.eventsenddate16-11-2018-
crisitem.author.deptGIR IUMA: Tecnología Microelectrónica-
crisitem.author.deptIU de Microelectrónica Aplicada-
crisitem.author.deptDepartamento de Ingeniería Electrónica y Automática-
crisitem.author.deptGIR IUMA: Sistemas de Información y Comunicaciones-
crisitem.author.deptIU de Microelectrónica Aplicada-
crisitem.author.deptDepartamento de Ingeniería Electrónica y Automática-
crisitem.author.deptGIR IUMA: Sistemas de Información y Comunicaciones-
crisitem.author.deptIU de Microelectrónica Aplicada-
crisitem.author.deptDepartamento de Ingeniería Electrónica y Automática-
crisitem.author.orcid0000-0002-4457-8942-
crisitem.author.orcid0000-0001-6864-9736-
crisitem.author.orcid0000-0003-3561-0135-
crisitem.author.orcid0000-0003-1295-1594-
crisitem.author.parentorgIU de Microelectrónica Aplicada-
crisitem.author.parentorgIU de Microelectrónica Aplicada-
crisitem.author.parentorgIU de Microelectrónica Aplicada-
crisitem.author.fullNameRodríguez Del Rosario, Raúl-
crisitem.author.fullNameGonzález Pérez, Benito-
crisitem.author.fullNameGarcía García, Javier Agustín-
crisitem.author.fullNameNúñez Ordóñez, Antonio-
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