Numerical Simulation for DC Schottky Gate Leakage Current in AlGaN/GaN HEMTs

Título:	Numerical Simulation for DC Schottky Gate Leakage Current in AlGaN/GaN HEMTs
Autores/as:	Rodríguez, R. González, B. García, J. Núñez, A. Toulon, G. Morancho, F.
Clasificación UNESCO:	3307 Tecnología electrónica
Palabras clave:	TCAD AlGaN/GaN HEMT on Si Trapping effects Schottky gate
Fecha de publicación:	2018
Publicación seriada:	Spanish Conference on Electron Devices
Conferencia:	12th Spanish Conference on Electron Devices, CDE 2018
Resumen:	Different causes of the gate leakage origin in AlGaN/GaN HEMTs on Si have been studied through numerical simulations. Based on DC measured results and employing Sentaurus Device, different trap effects under the Schottky gate must be included to reproduce the measured transfer characteristics in subthreshold regime. Additionally, numerical simulation aspects for GaN-based HEMTs are also detailed.
URI:	http://hdl.handle.net/10553/55402
ISBN:	978-1-5386-5779-9
ISSN:	2163-4971
DOI:	10.1109/CDE.2018.8596883
Fuente:	Proceedings of the 2018 12th Spanish Conference on Electron Devices, CDE 2018
URL:	https://api.elsevier.com/content/abstract/scopus_id/85061488527
Colección:	Actas de congresos

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