Identificador persistente para citar o vincular este elemento: http://hdl.handle.net/10553/55773
Título: Single event effects analysis and charge collection mechanisms on AlGaN/GaN HEMTs
Autores/as: Mateos Angulo, Sergio 
Rodríguez Del Rosario, Raúl 
Del Pino, J. 
Gonzalez, B. 
Khemchandani, S. L. 
Clasificación UNESCO: 3306 Ingeniería y tecnología eléctricas
Palabras clave: Transient-Response
Algan/Gan
Irradiation
Gan
Fecha de publicación: 2019
Publicación seriada: Semiconductor Science and Technology 
Resumen: This paper focuses on the effect of single event transients on AlGaN/GaN on sapphire high-electron-mobility-transistors (HEMTs). This results in a novel study in high performance transistors using sapphire substrate. Technology computer aided design tools are used in order to perform the radiation simulations, once the DC response of the transistors have been reproduced. Results show the relationship of the drain current density with ion energy and angle of incidence. The current increases as the ion penetrates deeper in the device due to higher energies, while it decreases as the angle increases. To our knowledge, angle strikes have never been studied before in AlGaN/GaN HEMTs. Several charge collection mechanisms are discussed and their relationships with ion energy and angle of incidence are established.
URI: http://hdl.handle.net/10553/55773
ISSN: 0268-1242
DOI: 10.1088/1361-6641/ab058a
Fuente: Semiconductor Science And Technology [ISSN 0268-1242], v. 34 (3), 035029
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