Please use this identifier to cite or link to this item:
|Title:||Single event effects analysis and charge collection mechanisms on AlGaN/GaN HEMTs||Authors:||Mateos-Angulo, S.
Del Pino Suárez, Francisco Javier
Lalchand Khemchandani, Sunil
|Keywords:||Investigación||Issue Date:||2019||Journal:||Semiconductor Science and Technology||Abstract:||This paper focuses on the effect of single event transients on AlGaN/GaN on sapphire high-electron-mobility-transistors (HEMTs). This results in a novel study in high performance transistors using sapphire substrate. Technology computer aided design tools are used in order to perform the radiation simulations, once the DC response of the transistors have been reproduced. Results show the relationship of the drain current density with ion energy and angle of incidence. The current increases as the ion penetrates deeper in the device due to higher energies, while it decreases as the angle increases. To our knowledge, angle strikes have never been studied before in AlGaN/GaN HEMTs. Several charge collection mechanisms are discussed and their relationships with ion energy and angle of incidence are established.||URI:||http://hdl.handle.net/10553/55773||ISSN:||02681242||DOI:||10.1088/1361-6641/ab058a|
|Appears in Collections:||Artículos|
Show full item record
Items in DSpace are protected by copyright, with all rights reserved, unless otherwise indicated.