Please use this identifier to cite or link to this item: http://hdl.handle.net/10553/55773
Title: Single event effects analysis and charge collection mechanisms on AlGaN/GaN HEMTs
Authors: Mateos Angulo, Sergio 
Rodríguez Del Rosario, Raúl 
Del Pino, J. 
Gonzalez, B. 
Khemchandani, S. L. 
UNESCO Clasification: 3306 Ingeniería y tecnología eléctricas
Keywords: Transient-Response
Algan/Gan
Irradiation
Gan
Issue Date: 2019
Journal: Semiconductor Science and Technology 
Abstract: This paper focuses on the effect of single event transients on AlGaN/GaN on sapphire high-electron-mobility-transistors (HEMTs). This results in a novel study in high performance transistors using sapphire substrate. Technology computer aided design tools are used in order to perform the radiation simulations, once the DC response of the transistors have been reproduced. Results show the relationship of the drain current density with ion energy and angle of incidence. The current increases as the ion penetrates deeper in the device due to higher energies, while it decreases as the angle increases. To our knowledge, angle strikes have never been studied before in AlGaN/GaN HEMTs. Several charge collection mechanisms are discussed and their relationships with ion energy and angle of incidence are established.
URI: http://hdl.handle.net/10553/55773
ISSN: 0268-1242
DOI: 10.1088/1361-6641/ab058a
Source: Semiconductor Science And Technology [ISSN 0268-1242], v. 34 (3), 035029
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