Please use this identifier to cite or link to this item: http://hdl.handle.net/10553/55672
Title: DC gate leakage current model accounting for trapping effects in AlGaN/GaN HEMTs
Authors: Rodríguez Del Rosario, Raúl 
González Pérez, Benito 
García García, Javier 
Toulon, Gaetan
Morancho, Frédéric
Núñez Ordóñez, Antonio 
UNESCO Clasification: 3304 Tecnología de los ordenadores
Keywords: AlGaN/GaN HEMT
Gate leakage current
Traps
Numerical simulation
Modeling
Issue Date: 2018
Journal: Electronics (Switzerland) 
Abstract: A DC leakage current model accounting for trapping effects under the gate of AlGaN/GaN HEMTs on silicon has been developed. Based on TCAD numerical simulations (with Sentaurus Device), non-local tunneling under the Schottky gate is necessary to reproduce the measured transfer characteristics in a subthreshold regime. Once the trap concentration and distribution are determined in the device, the resulting gate leakage current is modeled making use of Verilog-A, for typical operation regimes.
URI: http://hdl.handle.net/10553/55672
ISSN: 2079-9292
DOI: 10.3390/electronics7100210
Source: Electronics (Switzerland) [ISSN 2079-9292], v. 7 (10), p. 210, (2018)
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