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http://hdl.handle.net/10553/55672
Title: | DC gate leakage current model accounting for trapping effects in AlGaN/GaN HEMTs | Authors: | Rodríguez Del Rosario, Raúl González Pérez, Benito García García, Javier Toulon, Gaetan Morancho, Frédéric Núñez Ordóñez, Antonio |
UNESCO Clasification: | 3304 Tecnología de los ordenadores | Keywords: | AlGaN/GaN HEMT Gate leakage current Traps Numerical simulation Modeling |
Issue Date: | 2018 | Journal: | Electronics (Switzerland) | Abstract: | A DC leakage current model accounting for trapping effects under the gate of AlGaN/GaN HEMTs on silicon has been developed. Based on TCAD numerical simulations (with Sentaurus Device), non-local tunneling under the Schottky gate is necessary to reproduce the measured transfer characteristics in a subthreshold regime. Once the trap concentration and distribution are determined in the device, the resulting gate leakage current is modeled making use of Verilog-A, for typical operation regimes. | URI: | http://hdl.handle.net/10553/55672 | ISSN: | 2079-9292 | DOI: | 10.3390/electronics7100210 | Source: | Electronics (Switzerland) [ISSN 2079-9292], v. 7 (10), p. 210, (2018) |
Appears in Collections: | Artículos |
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