Please use this identifier to cite or link to this item:
Title: DC characteristics with substrate temperature for GaN on Si MOS-HEMTs
Authors: Rodriguez, R. 
Gonzalez, B. 
Garcia, J. 
Vega Martínez, Aurelio 
Nunez, A. 
UNESCO Clasification: 330790 Microelectrónica
Keywords: AlGaN/GaN
Substrate temperature
Issue Date: 2017
Journal: Spanish Conference on Electron Devices 
Conference: 2017 Spanish Conference on Electron Devices, CDE 2017 
Abstract: DC characteristics of AlGaN/GaN on Si MOS-HEMTs are measured and numerically simulated, with substrate temperature up to 140 degrees C, varying the gate width and gate length. Different gate recess depths are simulated in ATLAS in order to further investigate and optimize the device performance. Thermal boundary conditions and device thermal resistance are included in the structure for accurate simulation of the heating response. In addition, the relationship of the threshold voltage and saturation velocity with the substrate temperature and gate width has been studied and set in order to ease the modelling of these devices.
ISBN: 9781509050727
ISSN: 2163-4971
DOI: 10.1109/CDE.2017.7905214
Source: 2017 Spanish Conference on Electron Devices, CDE 2017 (7905214)
Appears in Collections:Actas de congresos
Show full item record

Page view(s)

checked on Sep 10, 2022

Google ScholarTM




Export metadata

Items in accedaCRIS are protected by copyright, with all rights reserved, unless otherwise indicated.