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Please use this identifier to cite or link to this item: http://hdl.handle.net/10553/41300
DC FieldValueLanguage
dc.contributor.authorRodriguez, R.-
dc.contributor.authorGonzalez, B.-
dc.contributor.authorGarcia, J.-
dc.contributor.authorVega Martínez, Aurelio-
dc.contributor.authorNunez, A.-
dc.date.accessioned2018-06-18T10:47:52Z-
dc.date.available2018-06-18T10:47:52Z-
dc.date.issued2017-
dc.identifier.isbn9781509050727-
dc.identifier.issn2163-4971-
dc.identifier.otherWoS-
dc.identifier.urihttp://hdl.handle.net/10553/41300-
dc.description.abstractDC characteristics of AlGaN/GaN on Si MOS-HEMTs are measured and numerically simulated, with substrate temperature up to 140 degrees C, varying the gate width and gate length. Different gate recess depths are simulated in ATLAS in order to further investigate and optimize the device performance. Thermal boundary conditions and device thermal resistance are included in the structure for accurate simulation of the heating response. In addition, the relationship of the threshold voltage and saturation velocity with the substrate temperature and gate width has been studied and set in order to ease the modelling of these devices.-
dc.languageeng-
dc.relation.ispartofSpanish Conference on Electron Devices-
dc.source2017 Spanish Conference on Electron Devices, CDE 2017 (7905214)-
dc.subject330790 Microelectrónica-
dc.subject.otherAlGaN/GaN-
dc.subject.otherMOS-HEMT-
dc.subject.otherSubstrate temperature-
dc.titleDC characteristics with substrate temperature for GaN on Si MOS-HEMTs-
dc.typeinfo:eu-repo/semantics/conferenceObject-
dc.typeinfo:eu-repo/semantics/conferenceObject-
dc.typeConferenceObject-
dc.relation.conference2017 Spanish Conference on Electron Devices, CDE 2017-
dc.identifier.doi10.1109/CDE.2017.7905214-
dc.identifier.scopus85019270381-
dc.identifier.isi000403327900013-
dc.contributor.authorscopusid7401544516-
dc.contributor.authorscopusid56082155300-
dc.contributor.authorscopusid8383160900-
dc.contributor.authorscopusid57192805669-
dc.contributor.authorscopusid56405149600-
dc.contributor.authorscopusid7103279517-
dc.investigacionIngeniería y Arquitectura-
dc.type2Actas de congresos-
dc.contributor.daisngid29724972-
dc.contributor.daisngid1092737-
dc.contributor.daisngid29725521-
dc.contributor.daisngid31461801-
dc.contributor.daisngid2351908-
dc.description.numberofpages4-
dc.identifier.eisbn978-1-5090-5072-7-
dc.utils.revisionNo-
dc.contributor.wosstandardWOS:Rodriguez, R-
dc.contributor.wosstandardWOS:Gonzalez, B-
dc.contributor.wosstandardWOS:Garcia, J-
dc.contributor.wosstandardWOS:Vega, A-
dc.contributor.wosstandardWOS:Nunez, A-
dc.date.coverdateAbril 2017-
dc.identifier.conferenceidevents121045-
dc.identifier.ulpgcSíes
item.grantfulltextnone-
item.fulltextSin texto completo-
crisitem.author.deptGIR IUMA: Tecnología Microelectrónica-
crisitem.author.deptIU de Microelectrónica Aplicada-
crisitem.author.deptDepartamento de Ingeniería Electrónica y Automática-
crisitem.author.deptGIR IUMA: Sistemas de Información y Comunicaciones-
crisitem.author.deptIU de Microelectrónica Aplicada-
crisitem.author.deptDepartamento de Ingeniería Electrónica y Automática-
crisitem.author.deptGIR IUMA: Sistemas de Información y Comunicaciones-
crisitem.author.deptIU de Microelectrónica Aplicada-
crisitem.author.deptDepartamento de Ingeniería Electrónica y Automática-
crisitem.author.deptGIR IUMA: Sistemas de Información y Comunicaciones-
crisitem.author.deptIU de Microelectrónica Aplicada-
crisitem.author.deptDepartamento de Ingeniería Electrónica y Automática-
crisitem.author.orcid0000-0002-4457-8942-
crisitem.author.orcid0000-0001-6864-9736-
crisitem.author.orcid0000-0003-3561-0135-
crisitem.author.orcid0000-0002-4154-8799-
crisitem.author.orcid0000-0003-1295-1594-
crisitem.author.parentorgIU de Microelectrónica Aplicada-
crisitem.author.parentorgIU de Microelectrónica Aplicada-
crisitem.author.parentorgIU de Microelectrónica Aplicada-
crisitem.author.parentorgIU de Microelectrónica Aplicada-
crisitem.author.fullNameRodríguez Del Rosario, Raúl-
crisitem.author.fullNameGonzález Pérez, Benito-
crisitem.author.fullNameGarcía García, Javier Agustín-
crisitem.author.fullNameVega Martínez, Aurelio-
crisitem.author.fullNameNúñez Ordóñez, Antonio-
crisitem.event.eventsstartdate08-02-2017-
crisitem.event.eventsenddate10-02-2017-
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