Please use this identifier to cite or link to this item:
http://hdl.handle.net/10553/69276
Title: | Temperature-Dependent Thermal Capacitance Characterization for SOI-MOSFETs | Authors: | Gonzalez, Benito Aja, Beatriz Artal, Eduardo Lazaro, Antonio Núñez Ordóñez, Antonio |
UNESCO Clasification: | 3307 Tecnología electrónica | Keywords: | Heat-Transport Resistance Model |
Issue Date: | 2019 | Journal: | IEEE Transactions on Electron Devices | Abstract: | Thermal capacitances are required to describe the fast dynamic thermal behavior in the silicon-on- insulator (SOI) devices. This article presents a physical model based on the ac technique, together with the characteristic thermal frequency determination through the frequency response of the output conductance, for calculating the thermal capacitance of single-finger and multi-finger SOI-MOSFETs. The model accounts for the total gate width and substrate temperature, making evident the augmented thermal coupling when multi- fingers are used. The thermal capacitances and the corresponding time constants, extracted from a variety of gate widths and number of fingers, are correctly predicted up to a substrate temperature of 150 degrees C. | URI: | http://hdl.handle.net/10553/69276 | ISSN: | 0018-9383 | DOI: | 10.1109/TED.2019.2935500 | Source: | Ieee Transactions On Electron Devices[ISSN 0018-9383],v. 66 (10), p. 4120-4125 |
Appears in Collections: | Artículos |
SCOPUSTM
Citations
7
checked on Dec 8, 2024
WEB OF SCIENCETM
Citations
7
checked on Dec 8, 2024
Page view(s)
109
checked on Dec 30, 2023
Google ScholarTM
Check
Altmetric
Share
Export metadata
Items in accedaCRIS are protected by copyright, with all rights reserved, unless otherwise indicated.