Please use this identifier to cite or link to this item: http://hdl.handle.net/10553/69276
Title: Temperature-Dependent Thermal Capacitance Characterization for SOI-MOSFETs
Authors: Gonzalez, Benito 
Aja, Beatriz
Artal, Eduardo
Lazaro, Antonio
Núñez Ordóñez, Antonio 
UNESCO Clasification: 3307 Tecnología electrónica
Keywords: Heat-Transport
Resistance
Model
Issue Date: 2019
Journal: IEEE Transactions on Electron Devices 
Abstract: Thermal capacitances are required to describe the fast dynamic thermal behavior in the silicon-on- insulator (SOI) devices. This article presents a physical model based on the ac technique, together with the characteristic thermal frequency determination through the frequency response of the output conductance, for calculating the thermal capacitance of single-finger and multi-finger SOI-MOSFETs. The model accounts for the total gate width and substrate temperature, making evident the augmented thermal coupling when multi- fingers are used. The thermal capacitances and the corresponding time constants, extracted from a variety of gate widths and number of fingers, are correctly predicted up to a substrate temperature of 150 degrees C.
URI: http://hdl.handle.net/10553/69276
ISSN: 0018-9383
DOI: 10.1109/TED.2019.2935500
Source: Ieee Transactions On Electron Devices[ISSN 0018-9383],v. 66 (10), p. 4120-4125
Appears in Collections:Artículos
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