Please use this identifier to cite or link to this item: http://hdl.handle.net/10553/42012
Title: Thermal resistance characterization for multifinger SOI-MOSFETs
Authors: Gonzalez, Benito 
Rodriguez, Raul 
Lázaro, Antonio
UNESCO Clasification: 3307 Tecnología electrónica
Keywords: Heat-Transport
Model
Methodology
Finfets
Devices
Issue Date: 2018
Publisher: 0018-9383
Journal: IEEE Transactions on Electron Devices 
Abstract: IEEE Thermal conductance in multifinger silicon-on-insulator (SOI) metal-oxide-semiconductor field-effect transistors (MOSFETs) is usually modeled at room temperature with a linear dependence on the total gate width, which is valid only when thermal coupling saturates. This paper presents a physically based model for calculating the thermal resistance of SOI-MOSFETs that accounts for progressive thermal coupling as the number of fingers increases and the substrate temperature. The model, extracted from a variety of gate geometries using the ac conductance method, correctly predicts the temperature rise in the device channel up to a substrate temperature of 150 °C. Finally, this simple thermal resistance model, which is applicable to nanometer-scale transistors, can easily be added to circuit simulators.
URI: http://hdl.handle.net/10553/42012
ISSN: 0018-9383
DOI: 10.1109/TED.2018.2853799
Source: IEEE Transactions on Electron Devices[ISSN 0018-9383],v. 65 (8419075), p. 3626-3632
Appears in Collections:Artículos
Show full item record

SCOPUSTM   
Citations

7
checked on Nov 26, 2023

WEB OF SCIENCETM
Citations

7
checked on Nov 19, 2023

Page view(s)

20
checked on Nov 4, 2023

Google ScholarTM

Check

Altmetric


Share



Export metadata



Items in accedaCRIS are protected by copyright, with all rights reserved, unless otherwise indicated.