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Hernández Ballester, Antonio

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Title Issue Date
Large-Signal DG-MOSFET Modelling for RFID Rectification Rodríguez, R.; González Pérez, Benito ; García, J. ; Lázaro, A.; Iñiguez, B., et al Issued date: 2016 DOI: 10.1155/2016/8017139 Source: Advances in Condensed Matter Physics[ISSN 1687-8108],v. 2016 (8017139) SJR: 0,232 - Q3 JCR: 1,044 - Q4 SCIE Artículo
N-well resistance modelling in Q-factor of doughnut-shaped PN varactors Marrero-Martín, M. ; González, B. ; García, J. ; Hernández Ballester, Antonio Issued date: 2015 DOI: 10.1016/j.sse.2014.10.005 Source: Solid-State Electronics[ISSN 0038-1101],v. 103, p. 104-109 SJR: 0,642 - Q1 JCR: 1,345 - Q2 SCIE Artículo
Rectennas design using DG-MOSFETs Rodríguez, Raúl ; Gonzalez, B. ; Garcia, J. ; Marrero Martín, Margarita Luisa ; Hernández Ballester, Antonio Issued date: 2013 DOI: 10.1117/12.2017149 Source: Vlsi Circuits And Systems Vi[ISSN 0277-786X],v. 8764 Actas de congresos
Study of RFIDs with SOI technology for UWB Rodriguez, Raul ; Gonzalez, B. ; Garcia, J. ; Marrero Martín, Margarita Luisa ; Hernández Ballester, Antonio Issued date: 2013 DOI: 10.1109/CDE.2013.6481348 Source: Proceedings Of The 2013 Spanish Conference On Electron Devices (Cde 2013)[ISSN 2163-4971], p. 83-86 Actas de congresos
Wide range fully integrated VCO with new cells-based varactor Marrero-Martin, Margarita ; Gonzalez, Benito ; Garcia, Javier ; Khemchandani, Sunil L. ; Hernández Ballester, Antonio , et al Issued date: 2012 DOI: 10.1080/00207217.2011.651699 Source: International Journal of Electronics[ISSN 0020-7217],v. 99, p. 1165-1178 SJR: 0,243 - Q3 JCR: 0,509 - Q4 SCIE Artículo
Circuit models for PN integrated varactors Marrero-Martín, M. ; García, J. ; González, B. ; Hernández Ballester, Antonio Issued date: 2011 DOI: 10.1109/SCED.2011.5744242 Source: Proceedings of the 8th Spanish Conference on Electron Devices, CDE'2011 (5744242) Actas de congresos
Coupled varactor based on PN junction and accumulation MOS for RF applications García, J. ; Marrero-Martín, M. ; González, B. ; Aldea, I.; Hernández Ballester, Antonio Issued date: 2011 DOI: 10.1109/SCED.2011.5744225 Source: Proceedings of the 8th Spanish Conference on Electron Devices, CDE'2011 (5744225) Actas de congresos
Effect of separation and depth of N+ diffusions in the quality factor and tuning range of PN varactors Marrero-Martín, M. ; Szydzik, T. ; García, J. ; González, B. ; Hernández Ballester, Antonio Issued date: 2011 DOI: 10.1117/12.888663 Source: Proceedings of SPIE - The International Society for Optical Engineering[ISSN 0277-786X],v. 8067 (80670T) Actas de congresos
Capacitive model for integrated PN varactors of cells with N+ buried layer Marrero-Martín, M. ; García, J. ; González, B. ; Hernández Ballester, Antonio Issued date: 2010 DOI: 10.1002/jnm.751 Source: Spanish Conference on Electron Devices [ISSN 2163-4971], v. 23 (4-5), p. 364-378 Artículo
A fully integrated single core VCO with a wide tuning range for DVB-H Khemchandani, Sunil Lalchand ; Del Pino Suarez, Javier ; Ortega, Roberto Diaz; Hernández Ballester, Antonio Issued date: 2009 DOI: 10.1002/mop.24318 Source: Microwave and Optical Technology Letters[ISSN 0895-2477],v. 51, p. 1338-1343 JCR: 0,682 - Q3 SCIE Artículo
Equivalent circuit model for capacitances in PN varactors with buried channel Marrero-Martín, M. ; García, J. ; González, B. ; Hernández Ballester, Antonio Issued date: 2009 DOI: 10.1109/SCED.2009.4800535 Source: Spanish Conference on Electron Devices [ISSN 2163-4971], p. 467-470 Actas de congresos
Capacitance estimation of PN varactors based on unit cells Marrero-Martín, M. ; González, B. ; García, J. ; Hernández Ballester, Antonio Issued date: 2009 DOI: 10.1109/SCED.2009.4800536 Source: Spanish Conference on Electron Devices [ISSN 2163-4971], p. 471-474 Actas de congresos
Accurate planar spiral inductor simulations with a 2.5-D electromagnetic simulator Goñi, Amaya; Pino, Javier Del ; González, Benito ; Khemchandani, Sunil ; Hernández Ballester, Antonio Issued date: 2008 DOI: 10.1002/mmce.20283 Source: International Journal of RF and Microwave Computer-Aided Engineering[ISSN 1096-4290],v. 18, p. 242-249 JCR: 0,462 - Q4 SCIE Artículo
A VCO with on chip tank for IEEE 802.11a Khemchandani, S. L. ; Del Pino Suarez, J. ; Goñi-Iturri, Amaya; Diaz, Roberto; Hernández Ballester, Antonio Issued date: 2008 DOI: 10.1002/mop.23757 Source: Microwave and Optical Technology Letters[ISSN 0895-2477],v. 50, p. 2632-2635 JCR: 0,743 - Q3 SCIE Artículo
Imodel: A novel tool for high-performance inductor selection Goñi, A.; Del Pino, J. ; Medina, O.; Khemchandani, S. L. ; Hernández Ballester, Antonio Issued date: 2008 Source: Microwave Journal[ISSN 0192-6225],v. 51, p. 90-100 JCR: 0,52 - Q3 SCIE Artículo
Influence of gate geometry in integrated MOS varactors on accumulation mode for RF Amselem, E.; González, B. ; García, J. ; Aldea, I.; Marrero Martín, Margarita Luisa , et al Issued date: 2007 DOI: 10.1109/SCED.2007.383997 Source: 2007 Spanish Conference on Electron Devices, Proceedings (4271170), p. 68-71 Actas de congresos
Improved tolerance to operation temperature in δ-doped inverted HFETs González, B. ; Hernández Ballester, Antonio Issued date: 2007 DOI: 10.1088/0268-1242/22/4/015 Source: Semiconductor Science and Technology [ISSN 0268-1242], v. 22 (4), p. 385-391 JCR: 1,899 - Q1 SCIE Artículo
An analytical model of electric substrate losses for planar spiral inductors on silicon Gõni, Amaya; del Pino, Javier ; González, Benito ; Hernández Ballester, Antonio Issued date: 2007 DOI: 10.1109/TED.2006.890366 Source: IEEE Transactions on Electron Devices[ISSN 0018-9383],v. 54(3), p. 546-553 JCR: 2,165 - Q1 SCIE Artículo
A fully integrated VCO with a wide tuning range for DVB-H Khemchandani, S. L. ; Betancort, G.; Del Pino Suarez, Javier ; Alvarado, Unai; Goni-Iturri, Amaya, et al Issued date: 2007 DOI: 10.1117/12.721953 Source: Proceedings of SPIE - The International Society for Optical Engineering[ISSN 0277-786X],v. 6590 (65901D) Actas de congresos
Influence of the diffusion geometry on PN Integrated Varactors García, J. ; González, B. ; Marrero-Martín, M. ; Aldea, I.; Del Pino, J. , et al Issued date: 2007 DOI: 10.1117/12.721999 Source: Proceedings of SPIE - The International Society for Optical Engineering[ISSN 0277-786X],v. 6590 (65901E) Actas de congresos