Please use this identifier to cite or link to this item: http://hdl.handle.net/10553/43596
Title: Coupled varactor based on PN junction and accumulation MOS for RF applications
Authors: García, J. 
Marrero-Martín, M. 
González, B. 
Aldea, I.
Hernández, A.
UNESCO Clasification: 3307 Tecnología electrónica
Keywords: Varactors , Capacitance , Voltage measurement , Tuning , Q factor , Junctions , Radio frequency
Issue Date: 2011
Journal: Proceedings of the 8th Spanish Conference on Electron Devices, CDE'2011
Conference: 8th Spanish Conference on Electron Devices, CDE 2011 
Abstract: In this work varactors based on pn-junction have been connected in parallel with accumulation mode MOS ones, in order to increase the final capacitance without losing the particular characteristics. So, three double varactors have been designed, fabricated and on-wafer measured. Results demonstrate that the combination of these varactors improve the global performance in relation to quality factor and tuning range.
URI: http://hdl.handle.net/10553/43596
ISBN: 9781424478637
DOI: 10.1109/SCED.2011.5744225
Source: Proceedings of the 8th Spanish Conference on Electron Devices, CDE'2011 (5744225)
Appears in Collections:Actas de congresos
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