Identificador persistente para citar o vincular este elemento: http://hdl.handle.net/10553/43596
Título: Coupled varactor based on PN junction and accumulation MOS for RF applications
Autores/as: García, J. 
Marrero-Martín, M. 
González, B. 
Aldea, I.
Hernández Ballester, Antonio 
Clasificación UNESCO: 3307 Tecnología electrónica
Palabras clave: Varactors , Capacitance , Voltage measurement , Tuning , Q factor , Junctions , Radio frequency
Fecha de publicación: 2011
Publicación seriada: Proceedings of the 8th Spanish Conference on Electron Devices, CDE'2011
Conferencia: 8th Spanish Conference on Electron Devices, CDE 2011 
Resumen: In this work varactors based on pn-junction have been connected in parallel with accumulation mode MOS ones, in order to increase the final capacitance without losing the particular characteristics. So, three double varactors have been designed, fabricated and on-wafer measured. Results demonstrate that the combination of these varactors improve the global performance in relation to quality factor and tuning range.
URI: http://hdl.handle.net/10553/43596
ISBN: 9781424478637
DOI: 10.1109/SCED.2011.5744225
Fuente: Proceedings of the 8th Spanish Conference on Electron Devices, CDE'2011 (5744225)
Colección:Actas de congresos
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