Please use this identifier to cite or link to this item: http://hdl.handle.net/10553/46921
Title: Influence of gate geometry in integrated MOS varactors on accumulation mode for RF
Authors: Amselem, E.
González, B. 
García, J. 
Aldea, I.
Marrero, M.
Iturri, A. G.
Del Pino, J. 
Khemchandani, S. L. 
Hernández, A.
Issue Date: 2007
Journal: 2007 Spanish Conference on Electron Devices, Proceedings
URI: http://hdl.handle.net/10553/46921
ISBN: 978-1-4244-0868-9
DOI: 10.1109/SCED.2007.383997
Source: 2007 Spanish Conference on Electron Devices, Proceedings (4271170), p. 68-71
Appears in Collections:Actas de Congresos

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