Please use this identifier to cite or link to this item: http://hdl.handle.net/10553/43598
Title: Capacitance estimation of PN varactors based on unit cells
Authors: Marrero-Martín, M. 
González, B. 
García, J. 
Hernández, A. 
UNESCO Clasification: 3307 Tecnología electrónica
Keywords: Varactors , Radiofrequency integrated circuits , Voltage , Q factor , Circuit optimization , Capacitance measurement , Geometry , Silicon germanium , Germanium silicon alloys , Anodes
Issue Date: 2009
Journal: Proceedings of the 2009 Spanish Conference on Electron Devices, CDE'09
Conference: 7th Spanish Conference on Electron Devices 
2009 Spanish Conference on Electron Devices, CDE'09 
Abstract: Integrated varactors are key elements in radio frequency integrated circuits. In this paper, several structures of varactors, based on p-n junction cells, are considered. A capacitance model is required to use these structures in a CAD environment. We have developed a model which considers area and perimeter capacitances of adjacent unit cells so as the reverse voltage dependence. Tuning ranges and quality factors are all well estimated. This model is applied to four varactors and their respective unit cells fabricated with AMS SiGe 0.35 mum technology. Modeled values are compared with measurements and the error between our estimations and measurements are smaller than 7% in all cases.
URI: http://hdl.handle.net/10553/43598
ISBN: 9781424428397
DOI: 10.1109/SCED.2009.4800536
Source: Proceedings of the 2009 Spanish Conference on Electron Devices, CDE'09 (4800536), p. 471-474
Appears in Collections:Actas de congresos
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