Identificador persistente para citar o vincular este elemento: http://hdl.handle.net/10553/43598
Título: Capacitance estimation of PN varactors based on unit cells
Autores/as: Marrero-Martín, M. 
González, B. 
García, J. 
Hernández Ballester, Antonio 
Clasificación UNESCO: 3307 Tecnología electrónica
Fecha de publicación: 2009
Publicación seriada: Spanish Conference on Electron Devices 
Conferencia: 7th Spanish Conference on Electron Devices (CDE 2009) 
Resumen: Integrated varactors are key elements in radio frequency integrated circuits. In this paper, several structures of varactors, based on p-n junction cells, are considered. A capacitance model is required to use these structures in a CAD environment. We have developed a model which considers area and perimeter capacitances of adjacent unit cells so as the reverse voltage dependence. Tuning ranges and quality factors are all well estimated. This model is applied to four varactors and their respective unit cells fabricated with AMS SiGe 0.35 mum technology. Modeled values are compared with measurements and the error between our estimations and measurements are smaller than 7% in all cases.
URI: http://hdl.handle.net/10553/43598
ISBN: 9781424428397
ISSN: 2163-4971
DOI: 10.1109/SCED.2009.4800536
Fuente: Spanish Conference on Electron Devices [ISSN 2163-4971], p. 471-474
Colección:Actas de congresos
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