Please use this identifier to cite or link to this item: http://hdl.handle.net/10553/43591
Title: Rectennas design using DG-MOSFETs
Authors: Rodríguez, Raúl 
Gonzalez, B. 
Garcia, J. 
Marrero Martín, Margarita Luisa 
Hernández, A. 
UNESCO Clasification: 3307 Tecnología electrónica
Keywords: RFIDs, UWB, Rectennas, SOI, DG-MOSFETs, Verilog-A
Issue Date: 2013
Publisher: 0277-786X
Journal: Proceedings of SPIE - The International Society for Optical Engineering 
Conference: Conference on VLSI Circuits and Systems VI 
6th Conference on VLSI Circuits and Systems 
Abstract: The objective of this work is to study the possibility of implementing SOI rectennas for UWB RFIDs, with undoped Double Gate MOSFETs (DG-MOSFETs). For that purpose we use two commercial TCAD tools: Sentaums Device (created by Synopsys), and ADS (created by Agilent) where in a large signal circuit model derived for the transistors is implemented with Verilog-A. Once the DG-MOSFETs output characteristics are fit, the rectennas performance at high frequencies is simulated; numerical and electrical results are successfully compared.
URI: http://hdl.handle.net/10553/43591
ISBN: 9780819495617
ISSN: 0277-786X
DOI: 10.1117/12.2017149
Source: Vlsi Circuits And Systems Vi[ISSN 0277-786X],v. 8764
Appears in Collections:Actas de congresos
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