Please use this identifier to cite or link to this item: http://hdl.handle.net/10553/43600
Title: Influence of the diffusion geometry on PN Integrated Varactors
Authors: García, J. 
González, B. 
Marrero-Martín, M. 
Aldea, I.
Del Pino, J. 
Hernández, A. 
UNESCO Clasification: 3307 Tecnología electrónica
Keywords: Design, pn junction, Integrated varactor, Radio frequency integrated circuit (RFIC)
Issue Date: 2007
Journal: Proceedings of SPIE - The International Society for Optical Engineering 
Conference: Conference on VLSI Circuits and Systems III 
VLSI Circuits and Systems III 
Abstract: In this work, four different structures based on PN junction are studied. These structures are based on changing the geometry of the p+ diffusion. The designed and fabricated devices will be used like integrated varactors in radiofrequency applications. The measures have been made at frequencies since 500 MHz to 10 GHz, and the influence that diffusion geometry has in the capacitance (C), the quality factor (Q) and the tuning range (TR) have been studied. The pn varactors have been simulated with Taurus Device and have been fabricated in a 0.35um SiGe standard process. In order to obtain better benefits of the varactors, the p(+) and n(+) diffusion geometries have been modified. This way, novel structures called crosses, fingers, donuts, and bars have been designed and fabricated. The results of the tuning range have been obtained superior to 40%.
URI: http://hdl.handle.net/10553/43600
ISBN: 978-0-8194-6718-8
0819467189
ISSN: 0277-786X
DOI: 10.1117/12.721999
Source: Proceedings of SPIE - The International Society for Optical Engineering[ISSN 0277-786X],v. 6590 (65901E)
Appears in Collections:Actas de congresos
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