|Title:||Circuit models for PN integrated varactors||Authors:||Marrero-Martín, M.
Hernández Ballester, Antonio
|UNESCO Clasification:||3307 Tecnología electrónica||Keywords:||Varactors , Capacitance , Integrated circuit modeling , Resonant frequency , Substrates , Junctions , Frequency measurement||Issue Date:||2011||Journal:||Proceedings of the 8th Spanish Conference on Electron Devices, CDE'2011||Conference:||8th Spanish Conference on Electron Devices, CDE 2011||Abstract:||This paper compares different circuit models describing the performance of integrated varactors, which are designed, manufactured, measured and simulated with a 0.35 μm silicon standard technology. Three models are presented, named: simple, capacitive-inductive and physical. Their differences consist on the circuit elements used, capacitances, inductances and resistances, and the way they are connected. The more elaborated one, the physical model, contains a large number of components and, therefore, produces a better approximation of the varactor response. All models are accurate and scalable over a wide range of layout dimensions and can be used to design radio-frequency integrated circuits, RFICs.||URI:||http://hdl.handle.net/10553/43595||ISBN:||9781424478637||DOI:||10.1109/SCED.2011.5744242||Source:||Proceedings of the 8th Spanish Conference on Electron Devices, CDE'2011 (5744242)|
|Appears in Collections:||Actas de congresos|
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