García García, Javier Agustín | accedaCRIS

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García García, Javier Agustín

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A noninvasive postoperative clinical score to identify patients at risk for postoperative pulmonary complications: the Air-Test Score Ferrando, Carlos; Suárez-Sipmann, Fernando; Librero, Julián; Pozo, Natividad; Soro, Marina, et al Issued date: 2020 DOI: 10.23736/S0375-9393.19.13932-6 Source: Minerva Anestesiologica [ISSN 0375-9393], v. 86 (4), p. 404-415 (Abril 2020) SJR: 0,558 - Q2 JCR: 3,051 - Q3 SCIE Artículo
DC gate leakage current model accounting for trapping effects in AlGaN/GaN HEMTs Rodríguez Del Rosario, Raúl; González Pérez, Benito; García García, Javier; Toulon, Gaetan; Morancho, Frédéric, et al Issued date: 2018 DOI: 10.3390/electronics7100210 Source: Electronics (Switzerland) [ISSN 2079-9292], v. 7 (10), p. 210, (2018) SJR: 0,461 - Q1 JCR: 1,764 - Q3 SCIE Artículo
Numerical Simulation for DC Schottky Gate Leakage Current in AlGaN/GaN HEMTs Rodríguez, R.; González, B.; García, J.; Núñez, A.; Toulon, G., et al Issued date: 2018 DOI: 10.1109/CDE.2018.8596883 Source: Proceedings of the 2018 12th Spanish Conference on Electron Devices, CDE 2018 Actas de congresos
An analysis of key process parameters for hybrid manufacturing by material extrusion and CNC machining Paz, Rubén; Santamarta, Javier; Monzón, Mario D.; García Montagut, Carlos Joshua; Pei, Eujin Issued date: 2018 DOI: 10.1007/s42242-018-0023-0 Source: Bio-design and manufacturing [ISSN 2096-5524], v. 1 (4), p. 237-244 ESCI Comentario
Electrothermal DC characterization of GaN on Si MOS-HEMTs Rodríguez Hernández, R.; González, B.; García, J.; Núñez, A. Issued date: 2017 DOI: 10.1016/j.sse.2017.08.002 Source: Solid-State Electronics[ISSN 0038-1101],v. 137, p. 44-51 SJR: 0,492 - Q2 JCR: 1,666 - Q3 SCIE Artículo
DC self-heating in GaN on Si MOS-HEMTs Rodríguez Del Rosario, Raúl; González Pérez, Benito; García García, Javier; Núñez Ordóñez, Antonio Issued date: 2017 Source: Conference book 41st Workshop on Compound Semiconductor Devices and Integrated Circuits held in Europe : 21-24 May, Las Palmas de Gran Canaria (2017). ISBN: 978-84-16989-68-3. p. 44-53 Actas de congresos
DC characteristics with substrate temperature for GaN on Si MOS-HEMTs Rodriguez, R.; Gonzalez, B.; Garcia, J.; Vega Martínez, Aurelio; Nunez, A. Issued date: 2017 DOI: 10.1109/CDE.2017.7905214 Source: 2017 Spanish Conference on Electron Devices, CDE 2017 (7905214) Actas de congresos
Physicochemical characterization of Theobroma cacao L. sweatings in Ecuadorian coast Balladares, Carlos; Choez-Guaranda, Ivan; Garcia, Jairo; Sosa, Daynet; Perez, Sebastian Issued date: 2016 DOI: 10.9755/ejfa.2016-02-187 Source: Emirates Journal Of Food And Agriculture[ISSN 2079-052X],v. 28 (10), p. 741-745 JCR: 0,494 - Q3 SCIE Artículo
Large-Signal DG-MOSFET Modelling for RFID Rectification Rodríguez, R.; González Pérez, Benito; García, J.; Lázaro, A.; Iñiguez, B., et al Issued date: 2016 DOI: 10.1155/2016/8017139 Source: Advances in Condensed Matter Physics[ISSN 1687-8108],v. 2016 (8017139) SJR: 0,232 - Q3 JCR: 1,044 - Q4 SCIE Artículo
Numerical simulation and compact modelling of AlGaN/GaN HEMTs with mitigation of self-heating effects by substrate materials Rodríguez, Raúl; González, Benito; García, Javier; Yigletu, Fetene M.; Tirado, José M., et al Issued date: 2015 DOI: 10.1002/pssa.201431897 Source: Physica Status Solidi (A) Applications and Materials Science[ISSN 1862-6300],v. 212, p. 1130-1136 SJR: 0,688 - Q2 JCR: 1,648 - Q2 SCIE Artículo
N-well resistance modelling in Q-factor of doughnut-shaped PN varactors Marrero-Martín, M.; González, B.; García, J.; Hernández Ballester, Antonio Issued date: 2015 DOI: 10.1016/j.sse.2014.10.005 Source: Solid-State Electronics[ISSN 0038-1101],v. 103, p. 104-109 SJR: 0,642 - Q1 JCR: 1,345 - Q2 SCIE Artículo
DC SHEs on GaN HEMTs varying substrate material Rodriguez, Raul; Gonzalez, Benito; Garcia, Javier; Nunez, Antonio; Yigletu, Fetene Mulugeta, et al Issued date: 2015 DOI: 10.1109/CDE.2015.7087452 Source: Proceedings Of The 2015 10Th Spanish Conference On Electron Devices (Cde)[ISSN 2163-4971], p. 34-+, (2015) Actas de congresos
Study of RFIDs with SOI technology for UWB Rodriguez, Raul; Gonzalez, B.; Garcia, J.; Marrero Martín, Margarita Luisa; Hernández Ballester, Antonio Issued date: 2013 DOI: 10.1109/CDE.2013.6481348 Source: Proceedings Of The 2013 Spanish Conference On Electron Devices (Cde 2013)[ISSN 2163-4971], p. 83-86 Actas de congresos
Rectennas design using DG-MOSFETs Rodríguez, Raúl; Gonzalez, B.; Garcia, J.; Marrero Martín, Margarita Luisa; Hernández Ballester, Antonio Issued date: 2013 DOI: 10.1117/12.2017149 Source: Vlsi Circuits And Systems Vi[ISSN 0277-786X],v. 8764 Actas de congresos
Wide range fully integrated VCO with new cells-based varactor Marrero-Martin, Margarita; Gonzalez, Benito; Garcia, Javier; Khemchandani, Sunil L.; Hernández Ballester, Antonio Issued date: 2012 DOI: 10.1080/00207217.2011.651699 Source: International Journal of Electronics[ISSN 0020-7217],v. 99, p. 1165-1178 SJR: 0,243 - Q3 JCR: 0,509 - Q4 SCIE Artículo
Effect of separation and depth of N+ diffusions in the quality factor and tuning range of PN varactors Marrero-Martín, M.; Szydzik, T.; García, J.; González, B.; Hernández Ballester, Antonio Issued date: 2011 DOI: 10.1117/12.888663 Source: Proceedings of SPIE - The International Society for Optical Engineering[ISSN 0277-786X],v. 8067 (80670T) Actas de congresos
Circuit models for PN integrated varactors Marrero-Martín, M.; García, J.; González, B.; Hernández Ballester, Antonio Issued date: 2011 DOI: 10.1109/SCED.2011.5744242 Source: Proceedings of the 8th Spanish Conference on Electron Devices, CDE'2011 (5744242) Actas de congresos
Coupled varactor based on PN junction and accumulation MOS for RF applications García, J.; Marrero-Martín, M.; González, B.; Aldea, I.; Hernández Ballester, Antonio Issued date: 2011 DOI: 10.1109/SCED.2011.5744225 Source: Proceedings of the 8th Spanish Conference on Electron Devices, CDE'2011 (5744225) Actas de congresos
Capacitive model for integrated PN varactors of cells with N+ buried layer Marrero-Martín, M.; García, J.; González, B.; Hernández Ballester, Antonio Issued date: 2010 DOI: 10.1002/jnm.751 Source: Spanish Conference on Electron Devices [ISSN 2163-4971], v. 23 (4-5), p. 364-378 Artículo
Capacitance estimation of PN varactors based on unit cells Marrero-Martín, M.; González, B.; García, J.; Hernández Ballester, Antonio Issued date: 2009 DOI: 10.1109/SCED.2009.4800536 Source: Spanish Conference on Electron Devices [ISSN 2163-4971], p. 471-474 Actas de congresos