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http://hdl.handle.net/10553/46913
Title: | DC SHEs on GaN HEMTs varying substrate material | Authors: | Rodriguez, Raul Gonzalez, Benito Garcia, Javier Nunez, Antonio Yigletu, Fetene Mulugeta Iniguez, Benjamin Tirado, Jose Maria |
UNESCO Clasification: | 330790 Microelectrónica | Keywords: | Fin-shaped field-effect transistor (FinFET) Self-heating effects (SSE) Thermal resistance Compact modelling |
Issue Date: | 2015 | Journal: | Spanish Conference on Electron Devices | Conference: | 10th Spanish Conference on Electron Devices, CDE 2015 | Abstract: | DC thermal effects modelling for nanometric silicon-on-insulator (SOI) and bulk fin-shaped field-effect transistors (FinFETs) is presented. Among other features, the model incorporates self-heating effects (SHEs), velocity saturation and short-channel effects. SHEs are analysed in depth by means of thermal resistances, which are determined through an equivalent thermal circuit, accounting for the degraded thermal conductivity of the ultrathin films within the device. Once the thermal resistance for single-fin devices has been validated for different gate lengths and biases, comparing the modelled output characteristics and device temperatures with numerical simulations obtained using Sentaurus Device, the thermal model is extended by circuital analysis to multi-fin devices with multiple fingers. | URI: | http://hdl.handle.net/10553/46913 | ISBN: | 9781479981083 | ISSN: | 2163-4971 | DOI: | 10.1109/CDE.2015.7087452 | Source: | Proceedings Of The 2015 10Th Spanish Conference On Electron Devices (Cde)[ISSN 2163-4971], p. 34-+, (2015) |
Appears in Collections: | Actas de congresos |
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