Please use this identifier to cite or link to this item: http://hdl.handle.net/10553/46913
Title: DC SHEs on GaN HEMTs varying substrate material
Authors: Rodriguez, Raul 
Gonzalez, Benito 
Garcia, Javier 
Nunez, Antonio 
Yigletu, Fetene Mulugeta
Iniguez, Benjamin
Tirado, Jose Maria
UNESCO Clasification: 3307 Tecnología electrónica
Keywords: Fin-shaped field-effect transistor (FinFET)
self-heating effects (SSE)
thermal resistance
compact modelling
Issue Date: 2015
Conference: 10th Spanish Conference on Electron Devices, CDE 2015 
Abstract: AlGaN/GaN HEMTs with sapphire substrate have been measured and numerically simulated considering self-heating effects. A complete DC performance was realized to extract the main electrical parameters with the aim to obtain a proper characterization of the sample. Afterwards, an accuracy and simple methodology has been established to determine the device thermal resistance with other possible substrates, Si, SiC and Mo, which are more suitable due to their lower thermal conductivity. Finally, we modify a compact model for AlGaN/GaN transistors to include the extrinsic resistances obtained from numerical simulations with all substrates.
URI: http://hdl.handle.net/10553/46913
ISBN: 9781479981083
DOI: 10.1109/CDE.2015.7087452
Source: Proceedings of the 2015 10th Spanish Conference on Electron Devices, CDE 2015 (7087452)
Appears in Collections:Actas de congresos
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