Please use this identifier to cite or link to this item: http://hdl.handle.net/10553/46913
Title: DC SHEs on GaN HEMTs varying substrate material
Authors: Rodriguez, Raul 
Gonzalez, Benito 
Garcia, Javier 
Nunez, Antonio 
Yigletu, Fetene Mulugeta
Iniguez, Benjamin
Tirado, Jose Maria
UNESCO Clasification: 330790 Microelectrónica
Keywords: Fin-shaped field-effect transistor (FinFET)
Self-heating effects (SSE)
Thermal resistance
Compact modelling
Issue Date: 2015
Journal: Spanish Conference on Electron Devices 
Conference: 10th Spanish Conference on Electron Devices, CDE 2015 
Abstract: DC thermal effects modelling for nanometric silicon-on-insulator (SOI) and bulk fin-shaped field-effect transistors (FinFETs) is presented. Among other features, the model incorporates self-heating effects (SHEs), velocity saturation and short-channel effects. SHEs are analysed in depth by means of thermal resistances, which are determined through an equivalent thermal circuit, accounting for the degraded thermal conductivity of the ultrathin films within the device. Once the thermal resistance for single-fin devices has been validated for different gate lengths and biases, comparing the modelled output characteristics and device temperatures with numerical simulations obtained using Sentaurus Device, the thermal model is extended by circuital analysis to multi-fin devices with multiple fingers.
URI: http://hdl.handle.net/10553/46913
ISBN: 9781479981083
ISSN: 2163-4971
DOI: 10.1109/CDE.2015.7087452
Source: Proceedings Of The 2015 10Th Spanish Conference On Electron Devices (Cde)[ISSN 2163-4971], p. 34-+, (2015)
Appears in Collections:Actas de congresos
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