Results 1-20 of 47 (Search time: 0.007 seconds).

Issue DateTitleAuthor(s)
12018An analysis of key process parameters for hybrid manufacturing by material extrusion and CNC machiningPaz, Rubén ; Santamarta, Javier; Monzón, Mario D. ; García Montagut, Carlos Joshua ; Pei, Eujin
22018Numerical Simulation for DC Schottky Gate Leakage Current in AlGaN/GaN HEMTsRodríguez, R. ; González, B. ; García, J. ; Núñez, A. ; Toulon, G.; Morancho, F.08596883.pdf.jpg
32018DC gate leakage current model accounting for trapping effects in AlGaN/GaN HEMTsToulon, Gaetan ; Morancho, Frédéric ; Rodríguez Del Rosario, Raúl ; González Pérez, Benito ; García García, Javier ; Núñez Ordóñez, Antonio DC_Gate_Leakage_Current_Model.pdf.jpg
42017DC self-heating in GaN on Si MOS-HEMTsRodríguez Del Rosario, Raúl ; González Pérez, Benito ; García García, Javier ; Núñez Ordóñez, Antonio 
52017Electrothermal DC characterization of GaN on Si MOS-HEMTsRodríguez, R. ; González, B. ; García, J. ; Núñez, A. 
62017DC characteristics with substrate temperature for GaN on Si MOS-HEMTsRodriguez, R. ; Gonzalez, B. ; Garcia, J. ; Vega Martínez, Aurelio ; Nunez, A. 
72016Physicochemical characterization of Theobroma cacao L. sweatings in Ecuadorian coastBalladares, Carlos; Choez-Guaranda, Ivan; Garcia, Jairo ; Sosa, Daynet; Perez, Sebastian ; Gonzalez, Juan Emilio; Viteri, Rafael; Barragan, Ana; Quijano-Aviles, Maria; Manzano, Patricia
82016Large-Signal DG-MOSFET Modelling for RFID RectificationRodríguez, R. ; González, B. ; García, J. ; Lázaro, A.; Iñiguez, B.; Hernández Ballester, A. 8017139.pdf.jpg
92015DC SHEs on GaN HEMTs varying substrate materialRodriguez, Raul ; Gonzalez, Benito ; Garcia, Javier ; Nunez, Antonio ; Yigletu, Fetene Mulugeta; Iniguez, Benjamin; Tirado, Jose MariaAS5255606244884481502314825534_content_1.pdf.jpg
102015Numerical simulation and compact modelling of AlGaN/GaN HEMTs with mitigation of self-heating effects by substrate materialsRodríguez, Raúl ; González, Benito ; García, Javier ; Yigletu, Fetene M.; Tirado, José M.; Iñiguez, Benjamín; Nunez, Antonio pssa.201431897.pdf.jpg
112015N-well resistance modelling in Q-factor of doughnut-shaped PN varactorsMarrero-Martín, M. ; González, B. ; García, J. ; Hernández, A. 
122013Rectennas design using DG-MOSFETsRodríguez, Raúl ; Gonzalez, B. ; Garcia, J. ; Marrero Martín, Margarita Luisa ; Hernández, A. 
132013Study of RFIDs with SOI technology for UWBRodriguez, Raul ; Gonzalez, B. ; Garcia, J. ; Marrero Martín, Margarita Luisa ; Hernandez, A. 
142012Wide range fully integrated VCO with new cells-based varactorMarrero-Martin, Margarita ; Gonzalez, Benito ; Garcia, Javier ; Khemchandani, Sunil L. ; Hernandez, Antonio ; Del Pino, Javier 
152011Effect of separation and depth of N<sup>+</sup>diffusions in the quality factor and tuning range of PN varactorsMarrero-Martín, M. ; Szydzik, T. ; García, J. ; González, B. ; Hernández, A.Wide range fully integrated VCO with new cells based varactor.pdf.jpg
162011Circuit models for PN integrated varactorsMarrero-Martín, M. ; García, J. ; González, B. ; Hernández, A.
172011Coupled varactor based on PN junction and accumulation MOS for RF applicationsGarcía, J. ; Marrero-Martín, M. ; González, B. ; Aldea, I.; Hernández, A.
182011Effect of separation and depth of N+ diffusions in the quality factor and tuning range of PN varactorsMarrero-Martin, M. ; Szydzik, T.; Garcia, J. ; Gonzalez, B. ; Hernandez, A. 
192010Capacitive model for integrated PN varactors of cells with N<sup>+</sup>buried layerMarrero-Martín, M. ; García, J. ; González, B. ; Hernández, A.
202010Capacitive model for integrated PN varactors of cells with N+ buried layerMarrero-Martin, M. ; Garcia, J. ; Gonzalez, B. ; Hernandez, A.