Please use this identifier to cite or link to this item:
http://hdl.handle.net/10553/51593
Title: | Reactive ion beam etching of indium phosphide in electron cyclotron resonance plasma using methane/hydrogen/nitrogen mixtures | Authors: | Sendra, José Ramón Anguita, José |
Issue Date: | 1994 | Publisher: | 0021-4922 | Journal: | Japanese Journal of Applied Physics, Part 2: Letters | URI: | http://hdl.handle.net/10553/51593 | ISSN: | 0021-4922 | DOI: | 10.1143/JJAP.33.L390 | Source: | Japanese Journal of Applied Physics[ISSN 0021-4922],v. 33, p. L390-L393 |
Appears in Collections: | Artículos |
Items in accedaCRIS are protected by copyright, with all rights reserved, unless otherwise indicated.