Please use this identifier to cite or link to this item: http://hdl.handle.net/10553/51593
Title: Reactive ion beam etching of indium phosphide in electron cyclotron resonance plasma using methane/hydrogen/nitrogen mixtures
Authors: Sendra, José Ramón 
Anguita, José
Issue Date: 1994
Publisher: 0021-4922
Journal: Japanese Journal of Applied Physics, Part 2: Letters 
URI: http://hdl.handle.net/10553/51593
ISSN: 0021-4922
DOI: 10.1143/JJAP.33.L390
Source: Japanese Journal of Applied Physics[ISSN 0021-4922],v. 33, p. L390-L393
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