Please use this identifier to cite or link to this item:
http://hdl.handle.net/10553/51593
DC Field | Value | Language |
---|---|---|
dc.contributor.author | Sendra, José Ramón | |
dc.contributor.author | Anguita, José | |
dc.date.accessioned | 2018-11-25T02:00:29Z | - |
dc.date.available | 2018-11-25T02:00:29Z | - |
dc.date.issued | 1994 | |
dc.identifier.issn | 0021-4922 | |
dc.identifier.uri | http://hdl.handle.net/10553/51593 | - |
dc.publisher | 0021-4922 | |
dc.relation.ispartof | Japanese Journal of Applied Physics, Part 2: Letters | |
dc.source | Japanese Journal of Applied Physics[ISSN 0021-4922],v. 33, p. L390-L393 | |
dc.title | Reactive ion beam etching of indium phosphide in electron cyclotron resonance plasma using methane/hydrogen/nitrogen mixtures | |
dc.type | info:eu-repo/semantics/article | es |
dc.type | Article | es |
dc.identifier.doi | 10.1143/JJAP.33.L390 | |
dc.identifier.scopus | 0028403701 | |
dc.contributor.authorscopusid | 7006497287 | |
dc.contributor.authorscopusid | 57202568509 | |
dc.description.lastpage | L393 | |
dc.description.firstpage | L390 | |
dc.relation.volume | 33 | |
dc.type2 | Artículo | es |
dc.identifier.ulpgc | Sí | es |
dc.description.scie | SCIE | |
item.fulltext | Sin texto completo | - |
item.grantfulltext | none | - |
crisitem.author.dept | GIR IUMA: Equipos y Sistemas de Comunicación | - |
crisitem.author.dept | IU de Microelectrónica Aplicada | - |
crisitem.author.dept | Departamento de Ingeniería Electrónica y Automática | - |
crisitem.author.orcid | 0000-0001-5385-792X | - |
crisitem.author.parentorg | IU de Microelectrónica Aplicada | - |
crisitem.author.fullName | Sendra Sendra, José Ramón | - |
Appears in Collections: | Artículos |
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