Reactive ion beam etching of indium phosphide in electron cyclotron resonance plasma using methane/hydrogen/nitrogen mixtures

Please use this identifier to cite or link to this item: http://hdl.handle.net/10553/51593

DC Field	Value	Language
dc.contributor.author	Sendra, José Ramón
dc.contributor.author	Anguita, José
dc.date.accessioned	2018-11-25T02:00:29Z	-
dc.date.available	2018-11-25T02:00:29Z	-
dc.date.issued	1994
dc.identifier.issn	0021-4922
dc.identifier.uri	http://hdl.handle.net/10553/51593	-
dc.publisher	0021-4922
dc.relation.ispartof	Japanese Journal of Applied Physics, Part 2: Letters
dc.source	Japanese Journal of Applied Physics[ISSN 0021-4922],v. 33, p. L390-L393
dc.title	Reactive ion beam etching of indium phosphide in electron cyclotron resonance plasma using methane/hydrogen/nitrogen mixtures
dc.type	info:eu-repo/semantics/article	es
dc.type	Article	es
dc.identifier.doi	10.1143/JJAP.33.L390
dc.identifier.scopus	0028403701
dc.contributor.authorscopusid	7006497287
dc.contributor.authorscopusid	57202568509
dc.description.lastpage	L393
dc.description.firstpage	L390
dc.relation.volume	33
dc.type2	Artículo	es
dc.identifier.ulpgc	Sí	es
dc.description.scie	SCIE
item.fulltext	Sin texto completo	-
item.grantfulltext	none	-
crisitem.author.dept	GIR IUMA: Equipos y Sistemas de Comunicación	-
crisitem.author.dept	IU de Microelectrónica Aplicada	-
crisitem.author.dept	Departamento de Ingeniería Electrónica y Automática	-
crisitem.author.orcid	0000-0001-5385-792X	-
crisitem.author.parentorg	IU de Microelectrónica Aplicada	-
crisitem.author.fullName	Sendra Sendra, José Ramón	-
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