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Please use this identifier to cite or link to this item: https://accedacris.ulpgc.es/handle/10553/51593
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dc.contributor.authorSendra, José Ramón
dc.contributor.authorAnguita, José
dc.date.accessioned2018-11-25T02:00:29Z-
dc.date.available2018-11-25T02:00:29Z-
dc.date.issued1994
dc.identifier.issn0021-4922
dc.identifier.urihttps://accedacris.ulpgc.es/handle/10553/51593-
dc.publisher0021-4922
dc.relation.ispartofJapanese Journal of Applied Physics, Part 2: Letters
dc.sourceJapanese Journal of Applied Physics[ISSN 0021-4922],v. 33, p. L390-L393
dc.titleReactive ion beam etching of indium phosphide in electron cyclotron resonance plasma using methane/hydrogen/nitrogen mixtures
dc.typeinfo:eu-repo/semantics/articlees
dc.typeArticlees
dc.identifier.doi10.1143/JJAP.33.L390
dc.identifier.scopus0028403701
dc.contributor.authorscopusid7006497287
dc.contributor.authorscopusid57202568509
dc.description.lastpageL393
dc.description.firstpageL390
dc.relation.volume33
dc.type2Artículoes
dc.identifier.ulpgcSíes
dc.description.scieSCIE
item.fulltextSin texto completo-
item.grantfulltextnone-
crisitem.author.deptDepartamento de Ingeniería Electrónica y Automática-
crisitem.author.orcid0000-0001-5385-792X-
crisitem.author.fullNameSendra Sendra, José Ramón-
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