Please use this identifier to cite or link to this item: http://hdl.handle.net/10553/51589
Title: Resonant Raman scattering study of InSb etched by reactive ion beam etching
Authors: Sendra, J. R. 
Armelles, G.
Utzmeier, T.
Anguita, J.
Briones, F.
Issue Date: 1996
Publisher: 0021-8979
Journal: Journal of Applied Physics 
URI: http://hdl.handle.net/10553/51589
ISSN: 0021-8979
DOI: 10.1063/1.362472
Source: Journal of Applied Physics[ISSN 0021-8979],v. 79, p. 8853-8855
Appears in Collections:Artículos
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