Identificador persistente para citar o vincular este elemento: https://accedacris.ulpgc.es/handle/10553/51589
Título: Resonant Raman scattering study of InSb etched by reactive ion beam etching
Autores/as: Sendra, J. R. 
Armelles, G.
Utzmeier, T.
Anguita, J.
Briones, F.
Fecha de publicación: 1996
Editor/a: 0021-8979
Publicación seriada: Journal of Applied Physics 
URI: https://accedacris.ulpgc.es/handle/10553/51589
ISSN: 0021-8979
DOI: 10.1063/1.362472
Source: Journal of Applied Physics[ISSN 0021-8979],v. 79, p. 8853-8855
Appears in Collections:Artículos
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