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Please use this identifier to cite or link to this item: http://hdl.handle.net/10553/51589
DC FieldValueLanguage
dc.contributor.authorSendra, J. R.
dc.contributor.authorArmelles, G.
dc.contributor.authorUtzmeier, T.
dc.contributor.authorAnguita, J.
dc.contributor.authorBriones, F.
dc.date.accessioned2018-11-25T01:58:32Z-
dc.date.available2018-11-25T01:58:32Z-
dc.date.issued1996
dc.identifier.issn0021-8979
dc.identifier.urihttp://hdl.handle.net/10553/51589-
dc.publisher0021-8979
dc.relation.ispartofJournal of Applied Physics
dc.sourceJournal of Applied Physics[ISSN 0021-8979],v. 79, p. 8853-8855
dc.titleResonant Raman scattering study of InSb etched by reactive ion beam etching
dc.typeinfo:eu-repo/semantics/articlees
dc.typeArticlees
dc.identifier.doi10.1063/1.362472
dc.identifier.scopus0041544743
dc.contributor.authorscopusid7006497287
dc.contributor.authorscopusid7004103072
dc.contributor.authorscopusid6603959480
dc.contributor.authorscopusid57202568509
dc.contributor.authorscopusid7005186899
dc.description.lastpage8855
dc.description.firstpage8853
dc.relation.volume79
dc.type2Artículoes
dc.identifier.ulpgcSíes
dc.description.scieSCIE
item.grantfulltextnone-
item.fulltextSin texto completo-
crisitem.author.deptGIR IUMA: Equipos y Sistemas de Comunicación-
crisitem.author.deptIU de Microelectrónica Aplicada-
crisitem.author.deptDepartamento de Ingeniería Electrónica y Automática-
crisitem.author.orcid0000-0001-5385-792X-
crisitem.author.parentorgIU de Microelectrónica Aplicada-
crisitem.author.fullNameSendra Sendra, José Ramón-
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