Please use this identifier to cite or link to this item:
http://hdl.handle.net/10553/51589
DC Field | Value | Language |
---|---|---|
dc.contributor.author | Sendra, J. R. | |
dc.contributor.author | Armelles, G. | |
dc.contributor.author | Utzmeier, T. | |
dc.contributor.author | Anguita, J. | |
dc.contributor.author | Briones, F. | |
dc.date.accessioned | 2018-11-25T01:58:32Z | - |
dc.date.available | 2018-11-25T01:58:32Z | - |
dc.date.issued | 1996 | |
dc.identifier.issn | 0021-8979 | |
dc.identifier.uri | http://hdl.handle.net/10553/51589 | - |
dc.publisher | 0021-8979 | |
dc.relation.ispartof | Journal of Applied Physics | |
dc.source | Journal of Applied Physics[ISSN 0021-8979],v. 79, p. 8853-8855 | |
dc.title | Resonant Raman scattering study of InSb etched by reactive ion beam etching | |
dc.type | info:eu-repo/semantics/article | es |
dc.type | Article | es |
dc.identifier.doi | 10.1063/1.362472 | |
dc.identifier.scopus | 0041544743 | |
dc.contributor.authorscopusid | 7006497287 | |
dc.contributor.authorscopusid | 7004103072 | |
dc.contributor.authorscopusid | 6603959480 | |
dc.contributor.authorscopusid | 57202568509 | |
dc.contributor.authorscopusid | 7005186899 | |
dc.description.lastpage | 8855 | |
dc.description.firstpage | 8853 | |
dc.relation.volume | 79 | |
dc.type2 | Artículo | es |
dc.identifier.ulpgc | Sí | es |
dc.description.scie | SCIE | |
item.grantfulltext | none | - |
item.fulltext | Sin texto completo | - |
crisitem.author.dept | GIR IUMA: Equipos y Sistemas de Comunicación | - |
crisitem.author.dept | IU de Microelectrónica Aplicada | - |
crisitem.author.orcid | 0000-0001-5385-792X | - |
crisitem.author.parentorg | IU de Microelectrónica Aplicada | - |
crisitem.author.fullName | Sendra Sendra,José Ramón | - |
Appears in Collections: | Artículos |
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