Identificador persistente para citar o vincular este elemento:
http://hdl.handle.net/10553/46929
Título: | Temperature in HFETs when operating in DC | Autores/as: | González, Benito Hernández Ballester, Antonio García, Javier Del Pino, F. Javier Sendra, José R. Nunez, Antonio |
Clasificación UNESCO: | 3307 Tecnología electrónica | Palabras clave: | Field-Effect Transistors Medium/High Temperatures Algaas/Ingaas Hfets Simulation Heterostructures, et al. |
Fecha de publicación: | 2003 | Publicación seriada: | Proceedings of SPIE - The International Society for Optical Engineering | Conferencia: | Conference on VLSI Circuits and Systems | Resumen: | This work analyses the DC response of InGaAs channel Modulation Doped Field-Effect Transistors, when varying temperature from 300 to 400 K. An analytic model for the intrinsic drain current is derived from previous work, done for a similar AlGaAs channel device, in order to explicitly show the temperature dependence. The extrinsic resistances are numerically evaluated and added in a straightway form to the model. Experimental output characteristics at different temperatures of an InGaAs HFET in static operation are compared with those offered by the resulting extrinsic model and numerical simulations. Computed relative errors are around 10%. | URI: | http://hdl.handle.net/10553/46929 | ISBN: | 0-8194-4977-6 | ISSN: | 0277-786X | DOI: | 10.1117/12.501195 | Fuente: | Proceedings of SPIE - The International Society for Optical Engineering[ISSN 0277-786X],v. 5117, p. 527-532 |
Colección: | Actas de congresos |
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